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FCP190N60E N Channel Power MOSFET
- Stock: 10
- SKU: 3893 | DAG589
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Rs. 454.30 (inc GST)
Rs.385.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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FCP190N60E N Channel Power MOSFET - High Voltage Switching
FCP190N60E - N-channel MOSFET with 600V VDS, low RDS(on), and 190A current capacity.
The FCP190N60E N Channel Power MOSFET is a robust component designed for high-voltage applications. With a maximum drain-source voltage of 600V, it excels in energy-efficient power switching. Its low on-resistance ensures minimal conduction losses, making it ideal for applications requiring high current handling, typically around 190A. The fast switching capability of this MOSFET further enhances its performance in high-frequency environments.
Built using advanced silicon technology, the FCP190N60E N Channel Power MOSFET features low gate charge and excellent thermal performance. This ensures effective heat dissipation during operation, contributing to the overall reliability of the device. Suitable for demanding applications, this component is a vital addition to any power management system.
For Indian electronics buyers, the FCP190N60E N Channel Power MOSFET is readily available at our store in Nashik or online for convenient delivery across India. Explore our range of MOSFETs to find the perfect fit for your project.
Explore the reliability and efficiency of MOSFET & IGBT from DNA. The FCP190N60E N Channel Power MOSFET is perfect for your high-voltage applications. Check other "MOSFET & IGBT" that we have in stock.
At DNA, we cater to the needs of Indian electronics buyers. If you cannot find certain parts, we can import them for you. We support both retail and bulk orders. Explore related items like SMPS, Diode, Crystal, Inductor, HMI Display, and Nextion Display. Contact Us.
Features of FCP190N60E N Channel Power MOSFET
- High Voltage Rating
- Low On-Resistance
- High Current Capability
- Fast Switching
- Thermal Performance
- Rugged Construction
Specification of FCP190N60E N Channel Power MOSFET
- Drain-Source Voltage (Vds): 600V
- Continuous Drain Current (Id): 190A
- Gate Threshold Voltage (VGS(TH)): 2.5V to 4.5V
- On-Resistance (RDS(on)): Low
- Gate Charge (QG): Low
Applications of FCP190N60E N Channel Power MOSFET
- Power management systems
- Energy-efficient devices
- High-voltage power supply
- Motor control applications
- Switching power supplies
Related Links for FCP190N60E N Channel Power MOSFET - High Voltage Switching
Package Includes
- 1 X FCP190N60E N Channel Power MOSFET
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