SSS2N60 N-Channel Power MOSFET TO-220 Package
- Stock: 25
- SKU: 10005 | DAI995
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SSS2N60 N-Channel Power MOSFET for Switching
SSS2N60 MOSFET with 600V rating, 2A current, and low RDS(on) for efficient power applications.
The SSS2N60 N-Channel Power MOSFET is engineered for high-voltage switching applications. It features a drain-source voltage of 600V, making it ideal for power supply, inverter, and motor control systems. With a continuous drain current of 2A and low on-resistance, it ensures efficient performance and reduced conduction losses. The TO-220 package provides effective thermal management and easy PCB mounting, making it suitable for various electronic projects.
This MOSFET excels in switch-mode power supplies (SMPS), where efficiency is crucial. Its fast switching capability allows for effective power conversion, enhancing the reliability of your designs. The SSS2N60 is a trusted choice for engineers looking to optimize their systems with high-performance components.
Choose the SSS2N60 N-Channel Power MOSFET for your next project to experience superior performance in high-voltage environments. With DNA as your supplier, you can access a wide range of MOSFETs and power transistors tailored to meet Indian market needs.
At DNA, we provide a wide selection of MOSFET & IGBT products from trusted manufacturers. Explore our range of MOSFETs to find the right components for your projects. Check other "MOSFET & IGBT" that we have in stock.
If you are searching for specific electronic components, DNA has you covered. We can assist with sourcing hard-to-find items and offer both retail and bulk purchasing options. Explore related products like Microcontrollers, Analog ICs, Inductors, Transistors, LCDs, and SMPS. Contact Us.
Features of SSS2N60 N-Channel Power MOSFET
- High drain-source voltage of 600V
- Continuous drain current of 2A
- Low RDS(on) for reduced conduction losses
- Fast switching performance
- TO-220 package for thermal management
Specification of SSS2N60 N-Channel Power MOSFET
- Transistor Type: N-Channel MOSFET
- Drain-Source Voltage (VDSS): 600V
- Gate-Source Voltage (VGSS): ±30V
- Continuous Drain Current (ID): 2A
- Pulsed Drain Current (ID(pulse)): 8A
- On-Resistance (RDS(on)): 4.5Ω
- Total Gate Charge (Qg): 16nC (typ.)
- Input Capacitance (Ciss): 300pF
- Power Dissipation (PD): 45W
- Operating Junction Temperature (Tj): 150°C
- Package: TO-220
Applications of SSS2N60 N-Channel Power MOSFET
- Switch-mode power supplies (SMPS)
- Motor control systems
- Inverter circuits
- High-voltage switching
Related Links for SSS2N60 N-Channel Power MOSFET for Switching
Package Includes
- 1 X SSS2N60 N-Channel Power MOSFET (TO-220)
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