SSS2N60 N-Channel Power MOSFET TO-220 Package

SSS2N60: 600V N-Channel MOSFET for High-Voltage Switching Applications

The SSS2N60 MOSFET is a high-voltage N-Channel enhancement-mode power MOSFET designed for efficient switching in power supply, inverter, and motor control applications. With a drain-source voltage rating of 600 V and a continuous drain current of 2 A, the SSS2N60 offers low on-resistance and reliable high-speed switching performance. The TO-220 package ensures effective heat dissipation and easy PCB mounting for various power electronics projects.

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Features of SSS2N60 MOSFET

• N-Channel enhancement-mode MOSFET
• High drain-source voltage of 600 V
• Continuous drain current of 2 A
• Low R_DS(on) for reduced conduction losses
• Fast switching performance for efficient power conversion
• TO-220 package for efficient thermal management
• Suitable for SMPS, inverter, and motor control applications

Specifications of SSS2N60 MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 600 V
• Gate-Source Voltage (V_GSS): ±30 V
• Continuous Drain Current (I_D): 2 A
• Pulsed Drain Current (I_D(pulse)): 8 A
• On-Resistance (R_DS(on)): 4.5 Ω type
• Total Gate Charge (Q_g): 16 nC (typ.)
• Input Capacitance (C_iss): 300 pF
• Power Dissipation (P_D): 45 W
• Operating Junction Temperature (T_j): 150 °C
• Package: TO-220

Applications of SSS2N60 MOSFET

• Switch-mode power supplies (SMPS)
• Motor control systems
• Inverter circuits
• High-voltage switching

Related Links

• SSS2N60 Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x SSS2N60 N-Channel Power MOSFET (TO-220)