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P55NF06 N-Channel POWER MOSFET


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  • Stock: 11

    Availability: InStock priceValidUntil: 2026-03-04

  • SKU: 380 | DAA395

Availability: InStock priceValidUntil: 2026-03-04

  • Rs. 25.96 (inc GST)
    Rs.22.00 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

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P55NF06 N Channel Power MOSFET

P55NF06 N Channel MOSFET, 50A, 60V, low resistance for efficient switching.

The P55NF06 N Channel Power MOSFET is designed for high-efficiency applications with a current capacity of 50 Amperes and a breakdown voltage of 60 Volts. This device features low on-state resistance of 14 mOhms, making it ideal for electronic ballast and low power switching applications. It operates efficiently in telecom and computer systems, ensuring reliable performance with minimal gate charge requirements.

Engineered for versatility, the P55NF06 N Channel Power MOSFET supports a wide temperature range from -55°C to +175°C. Its fast switching speed, with rise and fall times of 100 ns and 20 ns respectively, enhances performance in various high-speed applications. The TO-220 package ensures easy mounting and integration into your designs.

For Indian customers looking for a trustworthy solution, the P55NF06 N Channel Power MOSFET is available for purchase online or at our local shop in Nashik. Explore the complete collection of MOSFET & IGBT products to find the perfect fit for your projects.

Explore the reliability of MOSFET & IGBT products at Discover the P55NF06 N Channel Power MOSFET and enhance your electronic designs. Check other MOSFET & IGBT that we have in stock.

At we cater to the needs of Indian electronics buyers. If you can't find specific components, reach out to us. We can import hard-to-find parts and support both retail and bulk orders. Consider checking out related items like Capacitors, Analog ICs, Sensor Modules, Hongfa Relays, and DC to DC Converter Modules. Contact Us.

Features of P55NF06 N Channel Power MOSFET

  • N-Channel
  • 50A continuous drain current
  • 60V breakdown voltage
  • Low on-state resistance of 14 mOhms
  • Fast switching speed
  • Wide temperature range from -55°C to +175°C
  • TO-220 package

Specification of P55NF06 N Channel Power MOSFET

  • Id: 55 A
  • Vds: 60 V
  • Rds On: 14 mOhms
  • Vgs: 16 V
  • Pd: 95 W
  • Fall Time: 20 ns
  • Rise Time: 100 ns

Applications of P55NF06 N Channel Power MOSFET

  • Electronic ballast
  • Low power switching
  • Telecom applications
  • Computer power supplies
  • High-efficiency DC-DC converters

Related Links for P55NF06 N Channel Power MOSFET

    Package Includes

    • 1 X P55NF06 N Channel Power MOSFET
    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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