P55NF06 N Channel POWER MOSFET

P55NF06 50 Ampere 60 Volts N Channel Power MOSFET in TO220 Package

P55NF06 Power MOSFET is a three-terminal silicon device with current conduction capability of about 50 Ampere, fast switching speed. Low on-state resistance, breakdown voltage rating of 60 Volts, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.

P55NF06 N Channel Power MOSFET is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.

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Features of 55NF06 Power MOSFET

• Id - Continuous Drain Current : 55 A

• Vds - Drain-Source Breakdown Voltage : 60 V

• Rds On - Drain-Source Resistance : 14 mOhms

• Transistor Polarity : N-Channel

• Vgs - Gate-Source Breakdown Voltage : 16 V

• Maximum Operating Temperature : + 175 C

• Pd - Power Dissipation : 95 W

• Mounting Style : Through Hole

• Package / Case : TO-220-3

• Fall Time : 20 ns

• Forward Transconductance - Min : 30 S

• Minimum Operating Temperature : - 55 C

• Rise Time : 100 ns

• Typical Turn-Off Delay Time : 40 ns

Related Links

• P55NF06 Power MOSFET Datasheet