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BFP640H6327XTSA1 Bipolar RF Transistor(SOT-343)
- Stock: Out Of Stock
- SKU: 8845 | DAI174
-
Rs. 47.11 (inc GST)
Rs.39.93 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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BFP640H6327XTSA1 Bipolar RF Transistor(SOT-343)
BFP640H6327XTSA1 Bipolar RF Transistor(SOT-343)
The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its transition frequency fT of 42 GHz and high linearity characteristics at low currents make this device particularly suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
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Features of BFP640H6327XTSA1 Bipolar RF Transistor(SOT-343)
- Package Type: SOT-343
- Transistor Type: NPN, which means it uses a negative-positive-negative (NPN) structure
- Frequency Range: This transistor operates in the RF frequency range
- Low Noise: It has a low noise figure, making it ideal for use in sensitive signal processing applications like radio receivers.
Specifications of BFP640H6327XTSA1Bipolar RF Transistor(SOT-343)
- Product Category: RF Bipolar Transistors Series: BFP640
- Technology: Si
- Mounting Style: SMD/SMT
- Package/Case: SOT-343-4
- Qualification: AEC-Q100
- Packaging: Reel
Applications of BFP640H6327XTSA1Bipolar RF Transistor(SOT-343)
- Mobile Communication
- Test Equipment
- Amateur Radio
Package Includes
1 x BFP640H6327XTSA1Bipolar RF Transistor(SOT-343)
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