SW062R08E8T N channel MOSFET

SW062R08E8T N Channel MOSFET for Efficient Power Control

SW062R08E8T N channel MOSFET with low on-resistance, high efficiency, and rugged performance for reliable applications.

The SW062R08E8T N channel MOSFET offers advanced trench technology for low on-resistance and fast switching performance. This component is ideal for applications requiring high efficiency and reliability. With a drain-source voltage of 80V and a continuous drain current of 110A, this MOSFET is well-suited for synchronous rectification and Li-ion battery protection boards. Its rugged design includes features like 100% avalanche testing, ensuring dependable operation even under extreme conditions.

Engineered for various applications, the SW062R08E8T N channel MOSFET excels in environments demanding efficient power conversion and reliable performance. This MOSFET's low gate charge of 141nC enhances its responsiveness, making it a critical component in inverters and power supplies. By choosing the SW062R08E8T, you invest in a component that withstands high energy pulses while providing optimal switching capabilities.

Explore the benefits of the SW062R08E8T N channel MOSFET for your electronic projects. With its robust specifications and applications, this MOSFET stands out in the MOSFET & IGBT category. Enhance your designs with reliable power solutions that deliver consistent performance.

At DNA, we offer a wide range of MOSFET & IGBT products from trusted manufacturers. Explore the SW062R08E8T N channel MOSFET and other models in this category for superior performance. Check other "MOSFET & IGBT" that we have in stock.

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Features of SW062R08E8T N Channel MOSFET

• Low On-Resistance: Typ. 6.0mΩ @ VGS=10V
• Low Gate Charge: Typ. 141nC
• High Ruggedness: Enhanced capability for high energy pulses
• Improved dv/dt Capability
• 100% Avalanche Tested

Specification of SW062R08E8T N Channel MOSFET

• Drain-Source Voltage: 80V
• Continuous Drain Current: 110A
• Pulsed Drain Current: 440A
• Gate-Source Voltage: ±20V
• Total Power Dissipation: 142W
• Junction Temperature: -55°C to +150°C

Applications of SW062R08E8T N Channel MOSFET

• Synchronous Rectification
• Li-ion Battery Protection Boards
• Inverters
• Power Supply Applications

Related Links for SW062R08E8T N Channel MOSFET for Efficient Power Control

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X SW062R08E8T N channel MOSFET