SW062R08E8T N channel MOSFET
- Stock: 4
- SKU: 7924 | DAG848
-
Rs. 127.20 (inc GST)
Rs.107.80 + GSTQty :
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SW062R08E8T N Channel MOSFET for Efficient Power Control
SW062R08E8T N channel MOSFET with low on-resistance, high efficiency, and rugged performance for reliable applications.
The SW062R08E8T N channel MOSFET offers advanced trench technology for low on-resistance and fast switching performance. This component is ideal for applications requiring high efficiency and reliability. With a drain-source voltage of 80V and a continuous drain current of 110A, this MOSFET is well-suited for synchronous rectification and Li-ion battery protection boards. Its rugged design includes features like 100% avalanche testing, ensuring dependable operation even under extreme conditions.
Engineered for various applications, the SW062R08E8T N channel MOSFET excels in environments demanding efficient power conversion and reliable performance. This MOSFET's low gate charge of 141nC enhances its responsiveness, making it a critical component in inverters and power supplies. By choosing the SW062R08E8T, you invest in a component that withstands high energy pulses while providing optimal switching capabilities.
Explore the benefits of the SW062R08E8T N channel MOSFET for your electronic projects. With its robust specifications and applications, this MOSFET stands out in the MOSFET & IGBT category. Enhance your designs with reliable power solutions that deliver consistent performance.
At DNA, we offer a wide range of MOSFET & IGBT products from trusted manufacturers. Explore the SW062R08E8T N channel MOSFET and other models in this category for superior performance. Check other "MOSFET & IGBT" that we have in stock.
If you are searching for specific electronic components, reach out to us. We can help you find parts like Analog ICs, Connectors, Super Capacitors, SMPS, MOSFETs, and Resistors. If we don’t have it in stock, we can import it for you. Contact Us
Features of SW062R08E8T N Channel MOSFET
- Low On-Resistance: Typ. 6.0mΩ @ VGS=10V
- Low Gate Charge: Typ. 141nC
- High Ruggedness: Enhanced capability for high energy pulses
- Improved dv/dt Capability
- 100% Avalanche Tested
Specification of SW062R08E8T N Channel MOSFET
- Drain-Source Voltage: 80V
- Continuous Drain Current: 110A
- Pulsed Drain Current: 440A
- Gate-Source Voltage: ±20V
- Total Power Dissipation: 142W
- Junction Temperature: -55°C to +150°C
Applications of SW062R08E8T N Channel MOSFET
- Synchronous Rectification
- Li-ion Battery Protection Boards
- Inverters
- Power Supply Applications
Related Links for SW062R08E8T N Channel MOSFET for Efficient Power Control
Package Includes
- 1 X SW062R08E8T N channel MOSFET
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