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SW062R08E8T N channel MOSFET

Write a review | 4 reviews

Stock: 4
Availability: InStock priceValidUntil: 2026-11-24
SKU: 7924 | DAG848

Rs. 127.20 (inc GST)
Rs.107.80 + GST
Qty : Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

SW062R08E8T N Channel MOSFET for Efficient Power Control

SW062R08E8T N channel MOSFET with low on-resistance, high efficiency, and rugged performance for reliable applications.

The SW062R08E8T N channel MOSFET offers advanced trench technology for low on-resistance and fast switching performance. This component is ideal for applications requiring high efficiency and reliability. With a drain-source voltage of 80V and a continuous drain current of 110A, this MOSFET is well-suited for synchronous rectification and Li-ion battery protection boards. Its rugged design includes features like 100% avalanche testing, ensuring dependable operation even under extreme conditions.

Engineered for various applications, the SW062R08E8T N channel MOSFET excels in environments demanding efficient power conversion and reliable performance. This MOSFET's low gate charge of 141nC enhances its responsiveness, making it a critical component in inverters and power supplies. By choosing the SW062R08E8T, you invest in a component that withstands high energy pulses while providing optimal switching capabilities.

Explore the benefits of the SW062R08E8T N channel MOSFET for your electronic projects. With its robust specifications and applications, this MOSFET stands out in the MOSFET & IGBT category. Enhance your designs with reliable power solutions that deliver consistent performance.

At DNA, we offer a wide range of MOSFET & IGBT products from trusted manufacturers. Explore the SW062R08E8T N channel MOSFET and other models in this category for superior performance. Check other "MOSFET & IGBT" that we have in stock.

If you are searching for specific electronic components, reach out to us. We can help you find parts like Analog ICs, Connectors, Super Capacitors, SMPS, MOSFETs, and Resistors. If we don’t have it in stock, we can import it for you. Contact Us

Features of SW062R08E8T N Channel MOSFET

Low On-Resistance: Typ. 6.0mΩ @ VGS=10V
Low Gate Charge: Typ. 141nC
High Ruggedness: Enhanced capability for high energy pulses
Improved dv/dt Capability
100% Avalanche Tested

Specification of SW062R08E8T N Channel MOSFET

Drain-Source Voltage: 80V
Continuous Drain Current: 110A
Pulsed Drain Current: 440A
Gate-Source Voltage: ±20V
Total Power Dissipation: 142W
Junction Temperature: -55°C to +150°C

Applications of SW062R08E8T N Channel MOSFET

Synchronous Rectification
Li-ion Battery Protection Boards
Inverters
Power Supply Applications

Package Includes

1 X SW062R08E8T N channel MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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