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IRF510 N-Channel Power MOSFET

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Stock: 16
Availability: InStock priceValidUntil: 2026-12-02
SKU: 538 | DAA167

Rs. 64.19 (inc GST)
Rs.54.40 + GST
Qty : Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

IRF510 N Channel Power MOSFET - Fast Switching Device

IRF510 N Channel 100V, 5.6A Power MOSFET with low on-resistance and fast switching capabilities.

The IRF510 N Channel Power MOSFET is designed for high-performance applications, offering a drain-source voltage of 100 volts and continuous drain current of 5.6 amperes. This third-generation MOSFET is ideal for power management, thanks to its low on-resistance and fast switching speed. It operates efficiently in the TO220 package, making it suitable for commercial and industrial uses.

With features like a dynamic dV/dt rating, repetitive avalanche capability, and a wide operating temperature range of -55 to +175 °C, the IRF510 N Channel Power MOSFET ensures reliability in demanding environments. Its ease of paralleling and simple drive requirements make it a preferred choice for designers and engineers across India.

Explore the potential of the IRF510 N Channel Power MOSFET in various applications, from power supplies to motor control. Discover how this device can enhance your electronic projects and meet your power needs with confidence.

At DNA, we offer a comprehensive range of MOSFET & IGBT products from leading manufacturers. Explore the IRF510 N Channel Power MOSFET and see how it can meet your power management needs. Check other "MOSFET & IGBT" that we have in stock.

If you can't find specific electronic components, reach out to DNA. We can import parts for you and offer support for both retail and bulk orders. Check out our range including Development Modules, Hongfa Relays, Microcontrollers, Resistors, and DC to DC Converter ICs. Contact Us.

Features of IRF510 N Channel Power MOSFET

Fast switching
Low on-resistance
High thermal resistance
Rugged device design
Easy to parallel

Specification of IRF510 N Channel Power MOSFET

Drain-Source Voltage (VDS): 100 Volts
Gate-Source Voltage (VGS): ±20 Volts
Continuous Drain Current (VGS at 10 V TC = 25 °C): 5.6 Amperes
Pulsed Drain Current (IDM): 20 Amperes
Maximum Power Dissipation TC = 43 Watts

Applications of IRF510 N Channel Power MOSFET

Power supplies
Motor control
Switching applications
Amplification circuits
Industrial automation

Package Includes

1 X IRF510 N Channel Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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