IRF630 Power MOSFET
- Stock: 12
- SKU: 569 | DAA172
-
Rs. 35.40 (inc GST)
Rs.30.00 + GSTQty :
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GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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IRF630 N Channel Power MOSFET for Fast Switching
IRF630 N MOSFET offers low on-resistance, fast switching, and a TO-220AB package for efficient power dissipation.
The IRF630 N Channel Power MOSFET is ideal for designers seeking a reliable solution in various applications. This third-generation MOSFET features low on-resistance and fast switching capabilities, making it suitable for commercial and industrial use. With a power dissipation of approximately 50 W, it excels in environments that require robust performance. The TO-220AB package enhances thermal efficiency and is widely accepted across industries.
Engineered for versatility, the IRF630 N Channel Power MOSFET boasts a maximum drain current of 9A at 25°C, ensuring it meets demanding requirements. Its low intrinsic capacitance and minimized gate charge contribute to its fast switching attributes. This product is perfect for applications needing high dv/dt capability, providing reliability in critical situations.
Explore the benefits of the IRF630 N Channel Power MOSFET for your electronic designs. Ideal for power management, motor control, and other industrial applications, it stands out due to its excellent thermal resistance and cost-effectiveness. Order online or visit our local shop in Nashik for more options in MOSFET and IGBT categories.
Explore the extensive range of MOSFET & IGBT products at DNA Solutions. The IRF630 N Channel Power MOSFET is a reliable choice for efficient electronic designs. Check other "MOSFET & IGBT" that we have in stock.
If you are looking for more electronic components, DNA is here to help. We can assist you in finding Inductors, HMI Displays, Capacitors, Programmers, Diodes, and Digital ICs. If you cannot find certain parts, we can also import them for you. Contact Us.
Features of IRF630 N Channel Power MOSFET
- High dv/dt capability
- Low intrinsic capacitance
- Minimized gate charge
Specification of IRF630 N Channel Power MOSFET
- VDS Drain-source voltage: 200V
- VGS Gate-source voltage: ±20V
- Maximum Drain current: 9A
- Total dissipation: 75W
Applications of IRF630 N Channel Power MOSFET
- Power management
- Motor control
- Industrial automation
- Switching power supplies
Related Links for IRF630 N Channel Power MOSFET for Fast Switching
Package Includes
- 1 X IRF630 N Channel Power MOSFET
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