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SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET
- Stock: Out Of Stock
- SKU: 7346 | DAG193
-
Rs. 35.40 (inc GST)
Rs.30.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
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SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
SIRA18BDP-T1-GE3 MOSFET for efficient power switching with low R_DS(on) and fast switching capabilities.
The SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET is designed for high-efficiency power switching applications. It features a low gate charge and a low drain-source on-resistance, ensuring minimal power loss during operation. This makes the SIRA18BDP-T1-GE3 ideal for compact and high-speed designs. With a continuous drain current of 100A, it can handle significant loads reliably.
Engineered for performance, the SIRA18BDP-T1-GE3 N Channel MOSFET offers fast switching capabilities, making it suitable for various applications, including DC-DC converters and power management systems. The device operates at a maximum voltage of 40V, making it versatile for different electronic circuits.
Whether you are developing consumer electronics or industrial devices, the SIRA18BDP-T1-GE3 provides the reliability and efficiency needed for modern applications. Explore how this power MOSFET can enhance your designs today.
Discover the reliability of MOSFET & IGBT solutions at DNA. Explore the SIRA18BDP-T1-GE3 from a trusted brand. See other products in this MOSFET & IGBT category. Check other "MOSFET & IGBT" that we have in stock.
If you are looking for specific electronic components, DNA is here to help. We can import parts not in stock and support both retail and bulk orders. We also offer related items like DC to DC Converter Modules, Analog ICs, Sensor Modules, Development Modules, Connectors, and Nextion Displays. Contact Us
Features of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
- N-Channel MOSFET
- Low R_DS(on)
- High Power Density
- Low Gate Charge (Qg)
- Fast Switching
Specification of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
- Drain-Source Voltage (V_DS): 40V
- Continuous Drain Current (I_D): 100A
- Pulsed Drain Current (I_DM): 400A
- Gate-Source Voltage (V_GS): ±20V
- R_DS(on) (Max): 2.9mΩ at V_GS = 10V
- Total Gate Charge (Qg): 38 nC
Applications of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
- Power management systems
- DC-DC converters
- Industrial electronics
- Consumer electronics
Related Links for SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
Package Includes
- 1 X SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET
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