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SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-12-13
SKU: 7346 | DAG193

Rs. 35.40 (inc GST)
Rs.30.00 + GST
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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Description

SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

SIRA18BDP-T1-GE3 MOSFET for efficient power switching with low R_DS(on) and fast switching capabilities.

The SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET is designed for high-efficiency power switching applications. It features a low gate charge and a low drain-source on-resistance, ensuring minimal power loss during operation. This makes the SIRA18BDP-T1-GE3 ideal for compact and high-speed designs. With a continuous drain current of 100A, it can handle significant loads reliably.

Engineered for performance, the SIRA18BDP-T1-GE3 N Channel MOSFET offers fast switching capabilities, making it suitable for various applications, including DC-DC converters and power management systems. The device operates at a maximum voltage of 40V, making it versatile for different electronic circuits.

Whether you are developing consumer electronics or industrial devices, the SIRA18BDP-T1-GE3 provides the reliability and efficiency needed for modern applications. Explore how this power MOSFET can enhance your designs today.

Discover the reliability of MOSFET & IGBT solutions at DNA. Explore the SIRA18BDP-T1-GE3 from a trusted brand. See other products in this MOSFET & IGBT category. Check other "MOSFET & IGBT" that we have in stock.

If you are looking for specific electronic components, DNA is here to help. We can import parts not in stock and support both retail and bulk orders. We also offer related items like DC to DC Converter Modules, Analog ICs, Sensor Modules, Development Modules, Connectors, and Nextion Displays. Contact Us

Features of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

N-Channel MOSFET
Low R_DS(on)
High Power Density
Low Gate Charge (Qg)
Fast Switching

Specification of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

Drain-Source Voltage (V_DS): 40V
Continuous Drain Current (I_D): 100A
Pulsed Drain Current (I_DM): 400A
Gate-Source Voltage (V_GS): ±20V
R_DS(on) (Max): 2.9mΩ at V_GS = 10V
Total Gate Charge (Qg): 38 nC

Applications of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

Power management systems
DC-DC converters
Industrial electronics
Consumer electronics

Package Includes

1 X SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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