SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET

SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

SIRA18BDP-T1-GE3 MOSFET for efficient power switching with low R_DS(on) and fast switching capabilities.

The SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET is designed for high-efficiency power switching applications. It features a low gate charge and a low drain-source on-resistance, ensuring minimal power loss during operation. This makes the SIRA18BDP-T1-GE3 ideal for compact and high-speed designs. With a continuous drain current of 100A, it can handle significant loads reliably.

Engineered for performance, the SIRA18BDP-T1-GE3 N Channel MOSFET offers fast switching capabilities, making it suitable for various applications, including DC-DC converters and power management systems. The device operates at a maximum voltage of 40V, making it versatile for different electronic circuits.

Whether you are developing consumer electronics or industrial devices, the SIRA18BDP-T1-GE3 provides the reliability and efficiency needed for modern applications. Explore how this power MOSFET can enhance your designs today.

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Features of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

• N-Channel MOSFET
• Low R_DS(on)
• High Power Density
• Low Gate Charge (Qg)
• Fast Switching

Specification of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

• Drain-Source Voltage (V_DS): 40V
• Continuous Drain Current (I_D): 100A
• Pulsed Drain Current (I_DM): 400A
• Gate-Source Voltage (V_GS): ±20V
• R_DS(on) (Max): 2.9mΩ at V_GS = 10V
• Total Gate Charge (Qg): 38 nC

Applications of SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET

• Power management systems
• DC-DC converters
• Industrial electronics
• Consumer electronics

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Package Includes

• 1 X SIRA18BDP-T1-GE3 N Channel 30V Power MOSFET