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SPW55N80C3 N-Channel Power MOSFET
- Stock: Out Of Stock NotInStock
- SKU: 7382 | DAH150
-
Rs.
1,000.99 (inc GST)
Rs.848.30 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
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SPW55N80C3 N-Channel Power MOSFET
SPW55N80C3 N-Channel Power MOSFET
The SPW55N80C3 is a high-voltage N-channel power MOSFET. It is designed to handle high power and high efficiency in various applications, such as power supplies, motor control, and inverters. Built using advanced CoolMOS™ technology, the SPW55N80C3 provides low conduction and switching losses, making it ideal for high-performance power conversion systems.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of SPW55N80C3 N-Channel Power MOSFET
- High Voltage Rating: Capable of with standing high drain-source voltages (V<sub>DS</sub>) of up to 800V, making it suitable for high-voltage applications.
- Low On-Resistance: Extremely low R<sub>DS(on)</sub> (55mΩ) ensures minimal power loss during conduction, improving efficiency.
- Fast Switching: High-speed switching capability reduces switching losses, making it ideal for high-frequency applications.
- Low Gate Charge (Q<sub>g</sub>): The device has a low gate charge, reducing power consumption in driving the MOSFET.
Specifications of SPW55N80C3 N-Channel Power MOSFET
- Drain-Source Voltage (V<sub>DS</sub>): 800 V
- Continuous Drain Current (I<sub>D</sub>): 55 A (at 25°C)
- Pulsed Drain Current (I<sub>DM</sub>): 165 A
- R<sub>DS(on)</sub> (Max): 55 mΩ at V<sub>GS</sub> = 10 V
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0 – 5.0 V
- Total Gate Charge (Q<sub>g</sub>): 220 nC (typical)
- Power Dissipation (P<sub>D</sub>): 830 W
Package Includes
- 1 x SPW55N80C3 N-Channel Power MOSFET
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