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  • STP60NF10 Power MOSFET

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STP60NF10 Power MOSFET

  • Rs. 46.02 (inc GST)
    Rs.39.00 + GST

    Qty :

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IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

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STP60NF10 Power MOSFET

This Power MOSFET series realized with STMicro electronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge.

It is there fore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Features of STP60NF10 MOSFET

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • VDS Drain-source voltage (VGS = 0) 100V
  • VGS Gate-source voltage ± 20V
  • ID Drain current (continuous) at TC = 25°C 80A
  • ID Drain current (continuous) at TC=100°C 66A
  • IDM Drain current (pulsed) 320 A
  • PTOT Total dissipation at TC = 25°C 300W
  • Derating factor 2W/°C
  • dv/dt Peak diode recovery voltage slope 16V/ns
  • EAS Single pulse avalanche energy 485J
  • RthJC Thermal resistance junction-case max 0.5 °C/W
  • RthJA Thermal resistance junction-ambient max 62.5 °C/W
  • Tl Maximum lead temperature for soldering purpose 300 °C
  • Storage temperature -55 to 175°C

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