IKW75N65EH5 High Speed 5th Switching IGBT

IKW75N65EH5 High Speed 5th Switching IGBT

The IKW75N65EH5 is a high-speed 5th-generation Insulated Gate Bipolar Transistor (IGBT) developed by Infineon Technologies. It is optimized for high-frequency switching applications, offering a balance between low conduction and switching losses. The device integrates a free-wheeling diode to enhance efficiency in hard-switching environments, making it suitable for industrial, renewable energy, and motor drive applications.

DNA solutions, Nashik has various types of IGBT's. Check out our complete collection of IGBT's.

• High-Speed Switching: Optimized for frequencies up to 20 kHz

• Low Loss Performance: Reduced switching and conduction losses for better efficiency

• Integrated Soft Recovery Diode: Ensures minimal electromagnetic interference (EMI) during switching

• Rugged Design: Offers high reliability with robust short-circuit and overcurrent capabilities

• High Collector-Emitter Voltage (VCE): Rated up to 650 V

Specifications of IKW75N65EH5 High Speed 5th Switching IGBT

• Collector-Emitter Voltage (VCE): 650 V

• Continuous Collector Current (IC): 75 A

• Pulsed Collector Current (ICM): 150 A

• Gate-Emitter Voltage (VGE): ±20 V

• Power Dissipation (PD): Up to 312 W

• Switching Frequency: Up to 20 kHz

• Typical Turn-On Delay Time: ~25 ns

• Typical Turn-Off Delay Time: ~100 ns

• Operating Temperature Range: -55°C to +175°C

• Package: TO-247

Applications of IKW75N65EH5 High Speed 5th Switching IGBT

• Industrial Inverters

• Renewable Energy

• Power Supplies

• Electric Vehicles

• Welding Equipment

Package Includes

      1 x IKW75N65EH5 High Speed 5th Switching IGBT