IRF1405 N-Channel Power MOSFET
- Stock: Out Of Stock NotInStock
- SKU: 0711 | DAA168
88.50 (inc GST)
Rs.75.00 + GST
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IRF1405 N Channel Power MOSFET
IRF1405 N Channel 55 Volt, 169 Ampere Power MOSFET in TO220 Package
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF1405 power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make IRF1405 MOSFET an extremely efficient and reliable device for use in a wide variety of applications.
IRF1405 N Channel Power MOSFET comes in TO220 Package.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
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Features of IRF1405PbF Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
IDM Pulsed Drain Current 668 A
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 560mJ