IRF1405 N-Channel Power MOSFET

IRF1405 N Channel Power MOSFET 55V 169A

IRF1405 N Channel MOSFET, 55V, 169A, low on-resistance, fast switching.

The IRF1405 N Channel Power MOSFET delivers reliable performance with a 55 Volt rating and a continuous drain current of 169 Amperes. Designed in a TO220 package, it features low on-resistance and a maximum junction temperature of 175°C. This makes the IRF1405 suitable for various applications, including motor drives in industrial settings.

Engineered with advanced processing techniques, the IRF1405 N Channel Power MOSFET achieves excellent efficiency and fast switching capabilities. Its repetitive avalanche rating enhances reliability, making it ideal for demanding environments. This MOSFET is a solid choice for engineers looking for robust performance in power management.

Explore the potential of the IRF1405 in your applications. Its versatile design supports a range of uses in electronic circuits, ensuring optimal functionality in your projects. Choose the IRF1405 N Channel Power MOSFET for your next design and experience enhanced performance.

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Features of IRF1405 N Channel Power MOSFET

• Advanced Process Technology
• Ultra Low On-Resistance
• Fast Switching
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax

Specification of IRF1405 N Channel Power MOSFET

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 A
• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
• IDM Pulsed Drain Current 668 A
• PD @ TC = 25°C Power Dissipation 330 W
• VGS Gate-to-Source Voltage 20 V
• EAS Single Pulse Avalanche Energy 560 mJ

Applications of IRF1405 N Channel Power MOSFET

• Industrial motor drive
• Power management systems
• Switching applications
• High-frequency converters

Related Links for IRF1405 N Channel Power MOSFET 55V 169A

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Package Includes

• 1 X IRF1405 N Channel Power MOSFET