• IRFB4332 POWER MOSFET (N Channel)

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IRFB4332 POWER MOSFET (N Channel)

  • Stock: 49
  • SKU: 3691 | DAF011
  • Rs. 239.54 (inc GST)
    Rs.203.00 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRFB4332 N Channel Power MOSFET

IRFB4332 N-Channel Power Mosfet 250 V, 60 A, 0.033 ohm, TO-220AB, Through Hole

The IRFB4332PBF is a 250 Volts single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.

IRFB4332 HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of IRFB4332 MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRFB4332 MOSFET a highly efficient, robust and reliable device for PDP driving applications. 

DNA solutions, Nashik has various types of P Channel and N Channel Power Mosfet's. Check out our complete collection of  Power Mosfet's.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRFB4332 POWER MOSFET

  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  •  High Repetitive Peak Current Capability for Reliable Operation
  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  •  Low QG for Fast Response
  •  Short Fall & Rise Times for Fast Switching
  •  175°C Operating Junction Temperature for Improved Ruggedness
  •  Repetitive Avalanche Capability for Robustness and Reliability 

    Package Includes

    1 x IRFB4332 POWER MOSFET (N Channel)

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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