IRFB4332 N Channel Power MOSFET

IRFB4332 N-Channel Power Mosfet 250 V, 60 A, 0.033 ohm, TO-220AB, Through Hole

The IRFB4332PBF is a 250 Volts single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPULSE rating.

IRFB4332 HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of IRFB4332 MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this IRFB4332 MOSFET a highly efficient, robust and reliable device for PDP driving applications. 

DNA solutions, Nashik has various types of P Channel and N Channel Power Mosfet's. Check out our complete collection of  Power Mosfet's.

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

•  High Repetitive Peak Current Capability for Reliable Operation

• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

•  Low QG for Fast Response

•  Short Fall & Rise Times for Fast Switching

•  175°C Operating Junction Temperature for Improved Ruggedness

•  Repetitive Avalanche Capability for Robustness and Reliability 

Package Includes

1 x IRFB4332 POWER MOSFET (N Channel)