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IRFP460 N-Channel Power MOSFET
- Stock: Out Of Stock
- SKU: 8818 | DAD911
-
Rs. 138.77 (inc GST)
Rs.117.60 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
DNA IRFP460 N‑Channel Power MOSFET
IRFP460 N‑Channel MOSFET, 500V, 20A, low on-resistance, ideal for high-power applications.
The DNA IRFP460 N‑Channel Power MOSFET is a robust component designed for high-voltage applications. With a breakdown voltage of 500V and a continuous drain current of 20A at 25°C, it delivers reliable performance in demanding environments. Its low on-resistance and fast switching capabilities make it suitable for various applications, including power supplies and motor drives.
Engineered for rugged operation, the IRFP460 N‑Channel Power MOSFET features a TO-247 package and is designed for avalanche conditions, ensuring durability. This makes it an ideal choice for high-power industrial applications, such as offline SMPS and UPS systems, where efficiency is critical.
Choose the DNA IRFP460 N‑Channel Power MOSFET for your next project to benefit from its exceptional performance and reliability in high-power environments. Whether for induction heating or general-purpose high voltage switching, this MOSFET meets the demands of modern electronic designs.
Explore the extensive range of MOSFET & IGBT products at DNA. The IRFP460 N‑Channel Power MOSFET is perfect for your high-power needs. Check other "MOSFET & IGBT" that we have in stock.
If you are searching for specific electronic components, reach out to us at DNA. We can assist with imports if the parts are unavailable. We support retail and bulk orders, including items like Microcontrollers, SMPS, Sensors, and more. Contact Us.
Features of DNA IRFP460 N‑Channel Power MOSFET
- High breakdown voltage: 500 V
- Continuous drain current: 20 A @ 25 °C
- Low on-resistance and fast switching
- Designed for avalanche operation
- TO-247 package with isolated mounting hole
Specification of DNA IRFP460 N‑Channel Power MOSFET
- V_DS (drain-source): 500 V
- V_GS (gate-source): ±20 V
- I_D (continuous): 20 A @ 25 °C, 13 A @ 100 °C
- P_D (power dissipation): 280 W
- Package: TO‑247 (insulated mounting hole)
Applications of DNA IRFP460 N‑Channel Power MOSFET
- Offline SMPS
- Motor drives
- UPS systems
- Induction heating
- Welding equipment
Related Links for DNA IRFP460 N‑Channel Power MOSFET
Package Includes
- 1 X DNA IRFP460 N‑Channel Power MOSFET
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