• K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

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K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

  • Stock: Out Of Stock

    Availability: NotInStock priceValidUntil: 2026-01-17

  • SKU: 7579 | DAH400

Availability: NotInStock priceValidUntil: 2026-01-17

  • Rs. 348.71 (inc GST)
    Rs.295.52 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

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K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

The K4S641632H-UC75 is a 64Mbit SDRAM, organized as 4 megabits x 16, with a clock speed of 133MHz. It operates in synchronous mode, meaning that all signals are registered on the rising edge of the clock signal. The device features multiple banks (4 banks) of memory that allow for more efficient access and data throughput. This SDRAM is designed to operate at low power, making it suitable for a variety of battery-operated and power-sensitive applications.

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Features of K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

  • Memory Organization: 4M x 16-bit organization.
  • High-Speed Operation: Supports up to 133MHz clock speed (7.5ns clock cycle time).
  • Synchronous Interface: All operations are synchronized with the clock signal, ensuring predictable performance and timing.
  • Burst Mode Operation: Capable of burst read and write operations for efficient data transfers.
  • Four Banks: Internal banks for improved memory access efficiency.
  • Auto Refresh: Includes self-refresh and auto-refresh modes to ensure data integrity.
  • Low Power: Designed for low-power operation with power-down and standby modes.

Specifications of K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

  • Memory Size: 64Mb (4M x 16)
  • Organization: 4M x 16 bits (16-bit data bus)
  • Number of Banks: 4 internal banks
  • Clock Frequency: Up to 133MHz (7.5ns cycle time)

  • Access Time: 5.4ns (for 133MHz)
  • Operating Voltage: 3.3V ±0.3V
  • Burst Length: 1, 2, 4, 8, and full page
  • CAS Latency: Configurable CAS latency of 2 or 3

    Package Includes

    • 1 x K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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