K4S641632H-UC75 64MB Synchronous Dynamic Random Access Memory Device IC

K4S641632H-UC75 64MB Synchronous DRAM Memory IC

K4S641632H-UC75 64MB SDRAM with 133MHz clock speed and low power operation.

The K4S641632H-UC75 64MB Synchronous DRAM Memory IC is a reliable memory solution designed for various applications. This SDRAM operates at a clock speed of 133MHz, ensuring efficient data processing. With an organization of 4 megabits x 16, it features four internal banks for improved access efficiency. The device supports both burst read and write operations, making it ideal for high-speed data transfers.

Low power consumption is a key feature of the K4S641632H-UC75 64MB Synchronous DRAM Memory IC, suitable for battery-operated devices. The synchronous interface aligns all operations with the clock signal, providing predictable performance. Its auto-refresh feature maintains data integrity, while configurable CAS latency allows customization for specific needs.

Incorporate the K4S641632H-UC75 64MB Synchronous DRAM Memory IC into your electronic projects to enhance performance and reliability. This memory IC is perfect for various applications, including consumer electronics and power-sensitive devices, ensuring optimal functionality in your designs.

Explore high-quality Memory IC's at DNA. The K4S641632H-UC75 from a trusted manufacturer offers reliable performance. Check other Memory IC's that we have in stock.

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Features of K4S641632H-UC75 64MB Synchronous DRAM Memory IC

• Memory Organization: 4M x 16-bit organization
• High-Speed Operation: Supports up to 133MHz clock speed
• Synchronous Interface: Operations synchronized with clock
• Burst Mode Operation: Efficient data transfers
• Four Banks: Improved access efficiency
• Auto Refresh: Maintains data integrity
• Low Power: Designed for low-power operation

Specification of K4S641632H-UC75 64MB Synchronous DRAM Memory IC

• Memory Size: 64Mb (4M x 16)
• Organization: 4M x 16 bits
• Number of Banks: 4 internal banks
• Clock Frequency: Up to 133MHz
• Access Time: 5.4ns
• Operating Voltage: 3.3V ±0.3V
• Burst Length: 1, 2, 4, 8, and full page
• CAS Latency: Configurable CAS latency of 2 or 3

Applications of K4S641632H-UC75 64MB Synchronous DRAM Memory IC

• Consumer electronics
• Battery-operated devices
• High-speed data processing
• Power-sensitive applications

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Package Includes

• 1 X K4S641632H-UC75 64MB Synchronous DRAM Memory IC