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MJE13009D NPN Bipolar Junction Transistor MOSFET


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  • Stock: 10

    Availability: InStock priceValidUntil: 2026-02-16

  • SKU: 10437 | DAJ493

Availability: InStock priceValidUntil: 2026-02-16

  • Rs. 88.21 (inc GST)
    Rs.74.75 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

MJE13009D NPN Bipolar Junction Transistor MOSFET

MJE13009D NPN BJT for power switching with 400V voltage, 12A current, and TO-220 package.

The MJE13009D NPN Bipolar Junction Transistor MOSFET is designed for high-voltage applications. It operates at a collector-emitter voltage of 400V and supports a collector current of 12A, making it ideal for switch-mode power supplies and inverters. This BJT is housed in a TO-220 package, ensuring excellent heat dissipation, which enhances performance in demanding applications.

Applications of the MJE13009D include power switching in both 115V and 220V AC circuits. Its fast switching capabilities make it suitable for high-frequency operations, ensuring efficiency in various electronic devices. The MJE13009D is a reliable choice for engineers looking to optimize their designs.

When integrating the MJE13009D NPN Bipolar Junction Transistor MOSFET into your projects, you can expect robust performance and reliability. Explore its features and applications to elevate your electronic designs.

Discover the quality of MOSFET & IGBT components at DNA. Explore the MJE13009D NPN Bipolar Junction Transistor MOSFET and enhance your projects. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to Indian electronics buyers. If you cannot find specific parts, let us know. We can import items and support retail and bulk needs. Explore our offerings, including Programmers, Development Modules, Power Supplies, Transistors, SMPS, and LCDs. Contact Us.

Features of MJE13009D NPN Bipolar Junction Transistor MOSFET

  • High-voltage operation
  • Fast switching
  • Excellent heat dissipation

Specification of MJE13009D NPN Bipolar Junction Transistor MOSFET

  • Collector-Emitter Voltage: 400V
  • Collector Current: 12A
  • Package Type: TO-220

Applications of MJE13009D NPN Bipolar Junction Transistor MOSFET

  • Switch-mode power supplies
  • Inverters
  • High-frequency applications

Package Includes

  • 1 X MJE13009D NPN Bipolar Junction Transistor MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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