SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET

SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET

The SIRA18BDP-T1-GE3 is a Power MOSFET in a compact, surface-mount package. It features a low gate charge, low R_DS(on) (Drain-Source On-Resistance), and fast switching capability, making it suitable for high-efficiency, high-speed switching applications.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

• N-Channel MOSFET: Suitable for a variety of power switching applications.
  

• Low R_DS(on): Provides efficient switching and minimizes power losses.
  

• High Power Density: Capable of handling significant power loads in a small form factor.
  

• Low Gate Charge (Qg): Reduces the driving requirements for faster switching.
  

• Fast Switching: Ideal for applications that require rapid switching.
  

Specifications of SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET

• Drain-Source Voltage (V_DS): 40V
  

• Continuous Drain Current (I_D): 100A (at T_C = 25°C)
  

• Pulsed Drain Current (I_DM): 400A
  

• Gate-Source Voltage (V_GS): ±20V
  

• R_DS(on) (Max): 2.9mΩ at V_GS = 10V, I_D = 20A
  

• Total Gate Charge (Qg): 38 nC at V_GS = 10V
  

Package Includes

• 1 x SIRA18BDP-T1-GE3 , N Channel, 30 V Power MOSFET