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SSS2N60 N-Channel Power MOSFET TO-220 Package

  • Stock: 25

    Availability: InStock priceValidUntil: 2026-01-30

  • SKU: 10005 | DAI995

Availability: InStock priceValidUntil: 2026-01-30

  • Rs. 44.25 (inc GST)
    Rs.37.50 + GST

    Qty :

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SSS2N60 N-Channel Power MOSFET for Switching

SSS2N60 MOSFET with 600V rating, 2A current, and low RDS(on) for efficient power applications.

The SSS2N60 N-Channel Power MOSFET is engineered for high-voltage switching applications. It features a drain-source voltage of 600V, making it ideal for power supply, inverter, and motor control systems. With a continuous drain current of 2A and low on-resistance, it ensures efficient performance and reduced conduction losses. The TO-220 package provides effective thermal management and easy PCB mounting, making it suitable for various electronic projects.

This MOSFET excels in switch-mode power supplies (SMPS), where efficiency is crucial. Its fast switching capability allows for effective power conversion, enhancing the reliability of your designs. The SSS2N60 is a trusted choice for engineers looking to optimize their systems with high-performance components.

Choose the SSS2N60 N-Channel Power MOSFET for your next project to experience superior performance in high-voltage environments. With DNA as your supplier, you can access a wide range of MOSFETs and power transistors tailored to meet Indian market needs.

At DNA, we provide a wide selection of MOSFET & IGBT products from trusted manufacturers. Explore our range of MOSFETs to find the right components for your projects. Check other "MOSFET & IGBT" that we have in stock.

If you are searching for specific electronic components, DNA has you covered. We can assist with sourcing hard-to-find items and offer both retail and bulk purchasing options. Explore related products like Microcontrollers, Analog ICs, Inductors, Transistors, LCDs, and SMPS. Contact Us.

Features of SSS2N60 N-Channel Power MOSFET

  • High drain-source voltage of 600V
  • Continuous drain current of 2A
  • Low RDS(on) for reduced conduction losses
  • Fast switching performance
  • TO-220 package for thermal management

Specification of SSS2N60 N-Channel Power MOSFET

  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 600V
  • Gate-Source Voltage (VGSS): ±30V
  • Continuous Drain Current (ID): 2A
  • Pulsed Drain Current (ID(pulse)): 8A
  • On-Resistance (RDS(on)): 4.5Ω
  • Total Gate Charge (Qg): 16nC (typ.)
  • Input Capacitance (Ciss): 300pF
  • Power Dissipation (PD): 45W
  • Operating Junction Temperature (Tj): 150°C
  • Package: TO-220

Applications of SSS2N60 N-Channel Power MOSFET

  • Switch-mode power supplies (SMPS)
  • Motor control systems
  • Inverter circuits
  • High-voltage switching

Related Links for SSS2N60 N-Channel Power MOSFET for Switching

    Package Includes

    • 1 X SSS2N60 N-Channel Power MOSFET (TO-220)
    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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