TK6P60V N-Channel Power MOSFET TO-252 (DPAK) Package

TK6P60V: 600V N-Channel MOSFET for High-Efficiency Switching Applications

The TK6P60V MOSFET is a high-voltage, silicon N-Channel power MOSFET designed for compact, efficient switching in power supplies, lighting ballasts, and industrial control circuits. With a drain-source voltage rating of 600 V and a continuous drain current of 6.2 A, the TK6P60V offers low R_DS(on) for reduced conduction losses, high avalanche capability, and fast switching speed. The TO-252 (DPAK) surface-mount package ensures space-efficient board design with good thermal performance.

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Features of TK6P60V MOSFET

• N-Channel silicon power MOSFET
• High drain-source voltage: 600 V
• Continuous drain current: 6.2 A (T_c=25 °C)
• Low R_DS(on): 0.85 Ω type, 1.05 Ω max (V_GS=10 V, I_D=3.1 A)
• High avalanche energy capability
• Fast switching performance for efficient power conversion
• TO-252 (DPAK) package for surface-mount assembly

Specifications of TK6P60V MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 600 V
• Gate-Source Voltage (V_GSS): ±30 V
• Continuous Drain Current (I_D): 6.2 A (T_c=25 °C)
• Pulsed Drain Current (I_D(pulse)): 24.8 A
• On-Resistance (R_DS(on)): 0.85 Ω type, 1.05 Ω max
• Total Gate Charge (Q_g): 33 nC (typ.)
• Input Capacitance (C_iss): 980 pF
• Reverse Recovery Time (t_rr): 310 ns
• Power Dissipation (P_D): 45 W
• Operating Junction Temperature (T_j): 150 °C
• Package: TO-252 (DPAK)

Applications of TK6P60V MOSFET

• Switch-mode power supplies (SMPS)
• Lighting ballasts
• Industrial motor drivers
• Inverter and converter circuits
• General high-voltage switching

Related Links

• TK6P60V Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x TK6P60V N-Channel Power MOSFET (TO-252)