SPW55N80C3 N-Channel Power MOSFET

SPW55N80C3 N-Channel Power MOSFET

SPW55N80C3 N-Channel MOSFET handles 800V, 55A, and features low on-resistance and fast switching.

The SPW55N80C3 N-Channel Power MOSFET is designed for high-voltage applications, capable of handling drain-source voltages up to 800V. It excels in power supplies, motor control, and inverters due to its advanced CoolMOS™ technology. This technology ensures low conduction and switching losses, enhancing efficiency in power conversion systems. With a continuous drain current of 55A at 25°C, the SPW55N80C3 meets the demands of high-performance designs.

Key features of the SPW55N80C3 N-Channel Power MOSFET include an extremely low on-resistance of 55mΩ and a fast switching capability that minimizes losses in high-frequency applications. The low gate charge of 220nC reduces power consumption, making it ideal for efficient driving circuits. This MOSFET is perfect for engineers looking for reliable performance in their designs.

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Features of SPW55N80C3 N-Channel Power MOSFET

• High Voltage Rating
• Low On-Resistance
• Fast Switching
• Low Gate Charge

Specification of SPW55N80C3 N-Channel Power MOSFET

• Drain-Source Voltage (VDS): 800 V
• Continuous Drain Current (ID): 55 A (at 25°C)
• Pulsed Drain Current (IDM): 165 A
• RDS(on) (Max): 55 mΩ
• Gate Threshold Voltage (VGS(th)): 3.0 – 5.0 V
• Total Gate Charge (Qg): 220 nC
• Power Dissipation (PD): 830 W

Applications of SPW55N80C3 N-Channel Power MOSFET

• Power Supplies
• Motor Control
• Inverters
• High-Frequency Applications

Package Includes

• 1 X SPW55N80C3 N-Channel Power MOSFET