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  • STP140NF75 Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

STP140NF75 Power MOSFET

  • Rs. 103.84 (inc GST)
    Rs.88.00 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

STP140NF75 Power MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.


If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of STP140NF75 MOSFET

  • VDS Drain-source voltage (VGS = 0) 75V
  • VDGR Drain-gate voltage (RGS = 20 kΩ) 75V
  • VGS Gate- source voltage ± 20V
  • ID Drain current (continuous) at TC = 25°C 120A
  • ID Drain current (continuous) at TC = 100°C 100A
  • IDM Drain current (pulsed) 480A
  • Ptot Total dissipation at TC = 25°C 310W
  • Derating Factor 2.08W/°C
  • dv/dt Peak diode recovery voltage slope 10V/ns
  • EAS Single pulse avalanche energy 750mJ
  • Tstg Storage temperature -55 to 175°C
  • Tj Max. operating junction temperature -55 to 175°C
  • Rthj-case Thermal resistance junction-case max 0.48°C/W
  • Rthj-amb Thermal resistance junction-ambient max 62.5°C/W
  • TJ Maximum lead temperature for soldering purpose 300°C

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