2N6027 Programmable Unijunction Transistor

2N6027 Programmable Unijunction Transistor

2N6027 Transistor for programming characteristics like RBB; Max on-state voltage 1.5V; Operating temp range -50 to +100°C.

The 2N6027 Programmable Unijunction Transistor is a versatile component ideal for engineers looking to customize unijunction characteristics such as RBB, IV, and IP. This transistor excels in applications like thyristor triggering, oscillators, and timing circuits. Its low on-state voltage of 1.5V and high peak output voltage of 11V make it suitable for demanding environments. The 2N6027 Programmable Unijunction Transistor comes in a TO-92 plastic package, ensuring it meets high-volume requirements while being adaptable for automatic insertion equipment.

Engineered for reliability, the 2N6027 Programmable Unijunction Transistor features low gate-to-anode leakage current and a wide operating temperature range from -50 to +100°C. With a maximum power dissipation of 300mW, it can handle various applications efficiently. This transistor is also Pb-free, contributing to environmentally friendly designs. Customers can confidently integrate the 2N6027 Programmable Unijunction Transistor into their projects for optimal performance.

Ideal for Indian customers, this transistor can be used in specialized thyristor applications due to its anode gate. Explore the potential of the 2N6027 Programmable Unijunction Transistor for your electronic designs and ensure robust performance in your circuits.

At DNA, we offer a range of high-quality Diodes & Transistors from leading manufacturers. Explore the 2N6027 Programmable Unijunction Transistor and discover other products in the Diodes & Transistors category. Check other "Diodes & Transistors" that we have in stock.

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Features of 2N6027 Programmable Unijunction Transistor

• Programmable characteristics
• Low on-state voltage 1.5V
• High peak output voltage 11V
• Low leakage current 10nA
• Pb-free packaging available
• Wide operating temperature range -50 to +100°C
• High power dissipation 300mW

Specification of 2N6027 Programmable Unijunction Transistor

• Gate to Cathode Forward Voltage VGKF: 40V
• Gate to Cathode Reverse Voltage VGKR: 5.0V
• Gate to Anode Reverse Voltage VGAR: 40V
• Anode to Cathode Voltage VAK: ±40V
• Capacitive Discharge Energy E: 250J
• Junction Temperature TJ: -50 to +125°C
• Storage Temperature Range Tstg: -55 to +150°C

Applications of 2N6027 Programmable Unijunction Transistor

• Thyristor triggering
• Oscillator circuits
• Pulse circuits
• Timing applications
• Special thyristor applications

Package Includes

• 1 X 2N6027 Programmable Unijunction Transistor