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BC107B Transistor

Write a review | 2 reviews

Stock: 7
Availability: InStock priceValidUntil: 2026-03-25
SKU: 557 | DAA378

Rs. 23.60 (inc GST)
Rs.20.00 + GST

Qty :
Qty Qty

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

BC107B Transistor

The BC107 and BC107B are silicon Planar Epitaxial NPN transistors in TO-18 metal case.

They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary types are BC177 and BC177B respectively. The BC107B is Bipolar (BJT) Single Transistor.

Feature of BC107B Transistor

V_CBO Collector-Base Voltage (I _E= 0) 50 V
V_CEO Collector-Emitter Voltage (I_B = 0) 45 V
V_EBO Emitter-Base Voltage (I_C = 0) 6 V
I_C Collector Current 100 mA
P_tot Total Dissipation at T_amb ≤ 25 ^oC 0.3W
at T_C≤ 25 ^oC 0.75W
T_stg Storage Temperature -55 to 175 ^oC
T_jMax. Operating Junction Temperature 175 ^oC

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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BC107B Transistor

Qty :

BC107B Transistor

They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary types are BC177 and BC177B respectively. The BC107B is Bipolar (BJT) Single Transistor.

Feature of BC107B Transistor

VCBO Collector-Base Voltage (I E = 0) 50 V

VCEO Collector-Emitter Voltage (I B = 0) 45 V

VEBO Emitter-Base Voltage (I C = 0) 6 V

I C Collector Current 100 mA

Ptot Total Dissipation at Tamb ≤ 25 oC 0.3W

at TC ≤ 25 oC 0.75W

Tstg Storage Temperature -55 to 175 oC

Tj Max. Operating Junction Temperature 175 oC

Write a review

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V_CBO Collector-Base Voltage (I _E= 0) 50 V

V_CEO Collector-Emitter Voltage (I_B = 0) 45 V

V_EBO Emitter-Base Voltage (I_C = 0) 6 V

I_C Collector Current 100 mA

P_tot Total Dissipation at T_amb ≤ 25 ^oC 0.3W

at T_C≤ 25 ^oC 0.75W

T_stg Storage Temperature -55 to 175 ^oC

T_jMax. Operating Junction Temperature 175 ^oC