BUZ11 Power Mosfet

BUZ11 N-CHANNEL POWER MOSFET of 50 Volts and 30 Ampere

BUZ11 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.

BUZ11 N-Channel Power MOSFET comes in To-220 package and The BUZ11 MOSFET is also used for DC-DC and DC-AC converters and in the automotive environment for injection, ABS, airbags, lamp drivers and more.

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Features of BUZ11 MOSFET

• 30 Ampere , 50 Volts MOSFET
• RDS(ON)= 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications of BUZ11 MOSFET

• Lifecycle: Obsolete

• Product Category: MOSFET

• Technology: Si

• Mounting Style: Through Hole

• Package / Case: TO-220-3

• Number of Channels: 1 Channel

• Transistor Polarity: N-Channel

• Vds - Drain-Source Breakdown Voltage: 50 Volts

• Id - Continuous Drain Current: 30 Ampere

• Rds On - Drain-Source Resistance: 40 mOhms

• Vgs - Gate-Source Voltage: 20 V

• Minimum Operating Temperature: - 55 C

• Maximum Operating Temperature: + 150 C

• Configuration: Single

• Pd - Power Dissipation: 75 W

• Channel Mode: Enhancement

• Height: 16.3 mm

• Length: 10.67 mm

• Series: BUZ11

• Transistor Type: 1 N-Channel

• Width: 4.7 mm

• Brand: ON Semiconductor / Fairchild

• Fall Time: 130 ns

• Rise Time: 70 ns

• Typical Turn-Off Delay Time: 180 ns

• Typical Turn-On Delay Time: 30 ns

Related Links

• BUZ11 MOSFET Datasheet