ON Semiconductor BUZ11 N-Channel Power MOSFET

BUZ11 N-Channel MOSFET for switching applications, 50V, 30A, and low RDS(ON) of 0.040Ω.

The ON Semiconductor BUZ11 N-Channel Power MOSFET is designed for efficient switching applications. It operates at 50 Volts and supports a continuous drain current of 30 Amperes. This MOSFET features low gate drive power and high-speed switching, making it ideal for motor drivers, relay drivers, and DC-DC converters. The BUZ11 is packaged in a TO-220 case, ensuring easy integration into various electronic systems. Its high input impedance and linear transfer characteristics enhance its versatility in automotive and industrial applications.

Engineered for reliability, the BUZ11 N-Channel MOSFET provides fast switching speeds with a fall time of 130 ns and rise time of 70 ns. It is suitable for use in harsh environments with operating temperatures ranging from -55°C to +150°C. This makes it a preferred choice for applications requiring robust performance in automotive systems including ABS and airbags. Explore the potential of the BUZ11 in your next project to achieve efficient power management and control.

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Features of ON Semiconductor BUZ11 N-Channel Power MOSFET

• 30 Ampere
• 50 Volts
• RDS(ON)= 0.040Ω
• Nanosecond Switching Speeds
• High Input Impedance
• Single Channel
• TO-220 Package

Specification of ON Semiconductor BUZ11 N-Channel Power MOSFET

• Lifecycle: Obsolete
• Technology: Si
• Mounting Style: Through Hole
• Vds: 50 Volts
• Id: 30 Ampere
• Rds On: 40 mOhms
• Vgs: 20 V
• Pd: 75 W
• Configuration: Single

Applications of ON Semiconductor BUZ11 N-Channel Power MOSFET

• Switching Regulators
• Motor Drivers
• DC-DC Converters
• Automotive Applications
• Relay Drivers

Related Links for N-Channel Power MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X ON Semiconductor BUZ11 N-Channel Power MOSFET