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HY3215 N-Channel Enhancement Mode TO-220 MOSFET
- Stock: 25
- SKU: 7633 | DAH490
-
Rs. 128.50 (inc GST)
Rs.108.90 + GSTQty :
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HY3215 N-Channel Enhancement Mode TO-220 MOSFET
HY3215 N-Channel Enhancement Mode TO-220 MOSFET
The HY3215 N-Channel MOSFET is designed to provide efficient switching and reliable performance in power-driven applications. Operating as an enhancement-mode MOSFET, it requires a positive gate voltage relative to the source to turn on. Its TO-220 package allows for efficient heat dissipation, making it suitable for high-power circuits requiring thermal stability. This MOSFET has a high threshold voltage, low gate charge, and fast switching speed, which help optimize efficiency and response in power systems. The HY3215 is an N-Channel Enhancement Mode MOSFET, designed for switching applications and high-efficiency power conversion. Packaged in a TO-220 form, this MOSFET is suited for power supply circuits, DC-DC converters, and various motor control applications.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of HY3215 N-Channel Enhancement Mode TO-220 MOSFET
- High Current Capacity: Supports large drain currents, making it suitable for high-power applications.
- Low On-Resistance (R<sub>DS(on)</sub>): Reduces power loss, improving efficiency in power circuits.
- Fast Switching Speed: Allows for rapid transitions, ideal for high-frequency switching applications.
- High Drain-Source Voltage (V<sub>DS</sub>): Can withstand significant voltage, adding to versatility.
- Rugged TO-220 Package: Enables efficient heat dissipation and stable operation in thermally demanding environments.
Specifications of HY3215 N-Channel Enhancement Mode TO-220 MOSFET
- Drain-Source Voltage (V<sub>DS</sub>): 150V
- Continuous Drain Current (I<sub>D</sub>): 32A
- On-Resistance (R<sub>DS(on)</sub>): ≤ 0.055Ω (typical at V<sub>GS</sub> = 10V)
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 2V - 4V
- Maximum Power Dissipation (P<sub>D</sub>): 150W
Package Includes
- 1 x HY3215 N-Channel Enhancement Mode TO-220 MOSFET
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