HY3215 N-Channel Enhancement Mode TO-220 MOSFET
- Stock: 25
- SKU: 7633 | DAH490
-
Rs. 128.50 (inc GST)
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HY3215 N-Channel Enhancement Mode TO-220 MOSFET
HY3215 N-Channel Enhancement Mode TO-220 MOSFET
The HY3215 N-Channel MOSFET is designed to provide efficient switching and reliable performance in power-driven applications. Operating as an enhancement-mode MOSFET, it requires a positive gate voltage relative to the source to turn on. Its TO-220 package allows for efficient heat dissipation, making it suitable for high-power circuits requiring thermal stability. This MOSFET has a high threshold voltage, low gate charge, and fast switching speed, which help optimize efficiency and response in power systems. The HY3215 is an N-Channel Enhancement Mode MOSFET, designed for switching applications and high-efficiency power conversion. Packaged in a TO-220 form, this MOSFET is suited for power supply circuits, DC-DC converters, and various motor control applications.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
- High Current Capacity: Supports large drain currents, making it suitable for high-power applications.
- Low On-Resistance (R<sub>DS(on)</sub>): Reduces power loss, improving efficiency in power circuits.
- Fast Switching Speed: Allows for rapid transitions, ideal for high-frequency switching applications.
- High Drain-Source Voltage (V<sub>DS</sub>): Can withstand significant voltage, adding to versatility.
- Rugged TO-220 Package: Enables efficient heat dissipation and stable operation in thermally demanding environments.
Specifications of HY3215 N-Channel Enhancement Mode TO-220 MOSFET
- Drain-Source Voltage (V<sub>DS</sub>): 150V
- Continuous Drain Current (I<sub>D</sub>): 32A
- On-Resistance (R<sub>DS(on)</sub>): ≤ 0.055Ω (typical at V<sub>GS</sub> = 10V)
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 2V - 4V
- Maximum Power Dissipation (P<sub>D</sub>): 150W
Package Includes
- 1 x HY3215 N-Channel Enhancement Mode TO-220 MOSFET
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