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IRG4PC40UD Ultra-Fast CoPack IGBT

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-06-20
SKU: 639 | DAA177

Rs. 295.00 (inc GST)
Rs.250.00 + GST

Qty :
Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

IRG4PC40UD Ultra-Fast CoPack IGBT

IRG4PC40UD is an IGBT with Ultrafast Soft Recovery Diode.

Features of IRG4PC40UD Ultra-Fast CoPack IGBT

Ultra-Fast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultra-fast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package
Generation -4 IGBT's offer highest efficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Collector-to-Emitter Voltage V_CES 600 V
Continuous Collector Current (I_C @ T_C = 25°C) 40 Amp
Continuous Collector Current (I_C @ T_C = 100°C) 20 Amp
Pulsed Collector Current (I_CM) 160 Amp
Clamped Inductive Load Current (I_LM) 160 Amp
Diode Continuous Forward Current (I_F @ T_C = 100°C) 15 Amp
Diode Maximum Forward Current (I_FM) 160Amp
Gate-to-Emitter Voltage (V_GE)± 20 V
Maximum Power Dissipation (P_D @ T_C= 25°C) 160
Maximum Power Dissipation (P_D @ T_C = 100°C) 65

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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IRG4PC40UD Ultra-Fast CoPack IGBT

Qty :

IRG4PC40UD Ultra-Fast CoPack IGBT

Features of IRG4PC40UD Ultra-Fast CoPack IGBT

Ultra-Fast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFREDTM ultra-fast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry standard TO-247AC package

Generation -4 IGBT's offer highest efficiencies available

IGBT's optimized for specific application conditions

HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Collector-to-Emitter Voltage VCES 600 V

Continuous Collector Current (IC @ TC = 25°C) 40 Amp

Continuous Collector Current (IC @ TC = 100°C) 20 Amp

Pulsed Collector Current (ICM)  160 Amp

Clamped Inductive Load Current (ILM) 160 Amp

Diode Continuous Forward Current (IF @ TC = 100°C) 15 Amp

Diode Maximum Forward Current (IFM) 160Amp

Gate-to-Emitter Voltage (VGE)± 20 V

Maximum Power Dissipation (PD @ TC = 25°C) 160

Maximum Power Dissipation (PD @ TC = 100°C) 65

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Collector-to-Emitter Voltage V_CES 600 V

Continuous Collector Current (I_C @ T_C = 25°C) 40 Amp

Continuous Collector Current (I_C @ T_C = 100°C) 20 Amp

Pulsed Collector Current (I_CM) 160 Amp

Clamped Inductive Load Current (I_LM) 160 Amp

Diode Continuous Forward Current (I_F @ T_C = 100°C) 15 Amp

Diode Maximum Forward Current (I_FM) 160Amp

Gate-to-Emitter Voltage (V_GE)± 20 V

Maximum Power Dissipation (P_D @ T_C= 25°C) 160

Maximum Power Dissipation (P_D @ T_C = 100°C) 65