IRF9530N Power MOSFET

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFP9530 MOSFET comes in TO-220 Package. TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. 

Features of IRF9530N Power MOSFET

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• I_D @ T_C = 25°C Continuous Drain Current, V_GS @ -10V -14 A

• I_D @ T_C = 100°C Continuous Drain Current, V_GS @ -10V -10 A

• I_DM Pulsed Drain Current  -56 A

• P_D @T_C = 25°C Power Dissipation 79 W

• Linear Derating Factor 0.53 W/°C

• V_GS Gate-to-Source Voltage ± 20 V

• E_AS Single Pulse Avalanche Energy? 250 mJ

• I_AR Avalanche Current -8.4 A

• E_AR Repetitive Avalanche Energy 7.9 mJ

• dv/dt Peak Diode Recovery dv/dt ? -5.0 V/ns