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  • IRF9530N P-Channel Power MOSFET

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IRF9530N P-Channel Power MOSFET


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  • Stock: 4
  • SKU: 0713 | DAA162
  • Rs. 30.09 (inc GST)
    Rs.25.50 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

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IRF9530N P Channel Power MOSFET

IRF9530N P-Channel Power MOSFET 100V 14 Ampere in a TO-220 package

IRF9530N Power MOSFET has low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF9530N P-Channel Power MOSFET comes in TO-220 package. The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF9530N Power MOSFET

  • Advanced Process Technology

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • P-Channel

  • Fully Avalanche Rated

  • ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 A

  • ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A

  • IDM Pulsed Drain Current  -56 A

  • PD @TC = 25°C Power Dissipation 79 W

  • Linear Derating Factor 0.53 W/°C

  • VGS Gate-to-Source Voltage ± 20 V

  • EAS Single Pulse Avalanche Energy? 250 mJ

  • IAR Avalanche Current -8.4 A

  • EAR Repetitive Avalanche Energy 7.9 mJ

  • dv/dt Peak Diode Recovery dv/dt ? -5.0 V/ns

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