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SPW55N80C3 N-Channel Power MOSFET
- Stock: Out Of Stock
- SKU: 7382 | DAH150
-
Rs. 1,000.99 (inc GST)
Rs.848.30 + GSTQty :
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Delivery: 2–8 days across India. No MOQ required.
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SPW55N80C3 N-Channel Power MOSFET
SPW55N80C3 N-Channel MOSFET handles 800V, 55A, and features low on-resistance and fast switching.
The SPW55N80C3 N-Channel Power MOSFET is designed for high-voltage applications, capable of handling drain-source voltages up to 800V. It excels in power supplies, motor control, and inverters due to its advanced CoolMOS™ technology. This technology ensures low conduction and switching losses, enhancing efficiency in power conversion systems. With a continuous drain current of 55A at 25°C, the SPW55N80C3 meets the demands of high-performance designs.
Key features of the SPW55N80C3 N-Channel Power MOSFET include an extremely low on-resistance of 55mΩ and a fast switching capability that minimizes losses in high-frequency applications. The low gate charge of 220nC reduces power consumption, making it ideal for efficient driving circuits. This MOSFET is perfect for engineers looking for reliable performance in their designs.
At DNA, we provide a range of MOSFETs, including the SPW55N80C3, to support your electronic projects. Whether you are in Nashik or anywhere in India, you can trust us for prompt delivery. Explore our selection for more high-quality components suitable for your needs.
Discover the reliability of MOSFET & IGBT components at DNA. Explore the SPW55N80C3 by a trusted brand and find the right fit for your applications. Check other MOSFET & IGBT that we have in stock.
If you need specific electronic components, reach out to us at DNA. We can assist you in finding parts like MOSFETs, Microcontrollers, Sensors, and more. If not available, we can import them for you. Contact Us
Features of SPW55N80C3 N-Channel Power MOSFET
- High Voltage Rating
- Low On-Resistance
- Fast Switching
- Low Gate Charge
Specification of SPW55N80C3 N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 800 V
- Continuous Drain Current (ID): 55 A (at 25°C)
- Pulsed Drain Current (IDM): 165 A
- RDS(on) (Max): 55 mΩ
- Gate Threshold Voltage (VGS(th)): 3.0 – 5.0 V
- Total Gate Charge (Qg): 220 nC
- Power Dissipation (PD): 830 W
Applications of SPW55N80C3 N-Channel Power MOSFET
- Power Supplies
- Motor Control
- Inverters
- High-Frequency Applications
Package Includes
- 1 X SPW55N80C3 N-Channel Power MOSFET
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