SPW55N80C3 N-Channel Power MOSFET
- Stock: Out Of Stock
- SKU: 7382 | DAH150
-
Rs. 1,000.99 (inc GST)
Rs.848.30 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
SPW55N80C3 N-Channel Power MOSFET
SPW55N80C3 N-Channel Power MOSFET
The SPW55N80C3 is a high-voltage N-channel power MOSFET. It is designed to handle high power and high efficiency in various applications, such as power supplies, motor control, and inverters. Built using advanced CoolMOS™ technology, the SPW55N80C3 provides low conduction and switching losses, making it ideal for high-performance power conversion systems.
DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.
- High Voltage Rating: Capable of with standing high drain-source voltages (V<sub>DS</sub>) of up to 800V, making it suitable for high-voltage applications.
- Low On-Resistance: Extremely low R<sub>DS(on)</sub> (55mΩ) ensures minimal power loss during conduction, improving efficiency.
- Fast Switching: High-speed switching capability reduces switching losses, making it ideal for high-frequency applications.
- Low Gate Charge (Q<sub>g</sub>): The device has a low gate charge, reducing power consumption in driving the MOSFET.
Specifications of SPW55N80C3 N-Channel Power MOSFET
- Drain-Source Voltage (V<sub>DS</sub>): 800 V
- Continuous Drain Current (I<sub>D</sub>): 55 A (at 25°C)
- Pulsed Drain Current (I<sub>DM</sub>): 165 A
- R<sub>DS(on)</sub> (Max): 55 mΩ at V<sub>GS</sub> = 10 V
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0 – 5.0 V
- Total Gate Charge (Q<sub>g</sub>): 220 nC (typical)
- Power Dissipation (P<sub>D</sub>): 830 W
Package Includes
- 1 x SPW55N80C3 N-Channel Power MOSFET
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