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2N6027 Programmable Unijunction Transistor

Name: 2N6027 Programmable Unijunction Transistor
SKU: DAA288
Price: 49.32 INR
Availability: InStock
Rating: 2.5 (2 reviews)

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Stock: 2

SKU: 1121 | DAA288

Rs. 49.32 (inc GST)
Rs.41.80 + GST

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Description

2N6027 Programmable Unijunction Transistor

2N6027 Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values.

Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Features of 2N6027 Programmable Transistor

Programmable − RBB, , IV and IP
Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (RG = 10 k)
Pb−Free Packages are Available
Gate to Cathode Forward Voltage VGKF : 40V
Gate to Cathode Reverse Voltage VGKR : 5.0V
Gate to Anode Reverse Voltage VGAR : 40V
Anode to Cathode Voltage VAK : ±40V
Capacitive Discharge Energy E : 250J
Power Dissipation PD : 300mW
Operating Temperature TOPR : −50 to +100°C
Junction Temperature TJ : −50 to +125°C
Storage Temperature Range Tstg : −55 to +150°C

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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Product Images are shown for illustrative purposes only and may differ from actual product.

2N6027 Programmable Unijunction Transistor

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2N6027 Programmable Unijunction Transistor

Features of 2N6027 Programmable Transistor

Programmable − RBB, , IV and IP

Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA

Low Gate to Anode Leakage Current − 10 nA Maximum

High Peak Output Voltage − 11 V Typical

Low Offset Voltage − 0.35 V Typical (RG = 10 k)

Pb−Free Packages are Available

Gate to Cathode Forward Voltage VGKF : 40V

Gate to Cathode Reverse Voltage VGKR : 5.0V

Gate to Anode Reverse Voltage VGAR : 40V

Anode to Cathode Voltage VAK : ±40V

Capacitive Discharge Energy E : 250J

Power Dissipation PD : 300mW

Operating Temperature TOPR : −50 to +100°C

Junction Temperature TJ : −50 to +125°C

Storage Temperature Range Tstg : −55 to +150°C

Write a review

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