2N6027 Programmable Unijunction Transistor

2N6027 Transistor is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Features of 2N6027 Programmable Transistor

• Programmable − RBB, , IV and IP

• Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA

• Low Gate to Anode Leakage Current − 10 nA Maximum

• High Peak Output Voltage − 11 V Typical

• Low Offset Voltage − 0.35 V Typical (RG = 10 k)

• Pb−Free Packages are Available

• Gate to Cathode Forward Voltage VGKF: 40V

• Gate to Cathode Reverse Voltage VGKR: 5.0V

• Gate to Anode Reverse Voltage VGAR: 40V

• Anode to Cathode Voltage VAK: ±40V

• Capacitive Discharge Energy E: 250J

• Power Dissipation PD: 300mW

• Operating Temperature TOPR: −50 to +100°C

• Junction Temperature TJ: −50 to +125°C

• Storage Temperature Range Tstg: −55 to +150°C