IRF1404 N Channel Power MOSFET

IRF1404 is a 40 Volts Single N-Channel Power MOSFET in a TO-220 package

IRF1404 Power MOSFET is a seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.

The IRF1404 N-Channel Power MOSFET comes on TO-220 package. The The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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Features of IRF1404 Power MOSFET

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Automotive Qualified (Q101)

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 202 A

• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 143 A

• IDM Pulsed Drain Current 808 A

• PD @TC = 25°C Power Dissipation 333 W

• Linear Derating Factor 2.2 W/°C

• VGS Gate-to-Source Voltage ± 20 V

• EAS Single Pulse Avalanche Energy 620 mJ

Benefits of IRF1404 Power MOSFET

• Increased ruggedness

• Multi-vendor compatibility

• Industry standard qualification level

• Standard pinout allows for drop in replacement

• High current carrying capability

Related Links

• IRF1404 Power MOSFET Datasheet