2SK2624 N-Channel Power MOSFET TO-220F (Insulated) Package

2SK2624: 600V N-Channel MOSFET for General-Purpose High-Voltage Switching

The 2SK2624 MOSFET is an N‑Channel silicon power MOSFET designed for ultrahigh‑speed, efficient switching in general‑purpose power supplies and driver stages. With a drain‑source voltage rating of 600 V and continuous drain current of 3.5 A, the 2SK2624 offers low on‑resistance and low total gate charge for reduced losses. The insulated TO‑220F (TO‑220FI‑LS) package simplifies mounting and provides enhanced safety.

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Features of 2SK2624 MOSFET

• N‑Channel silicon power MOSFET
• High drain‑source voltage: 600 V
• Continuous drain current: 3.5 A (DC)
• Low R_DS(on): 2.0 Ω type, 2.6 Ω max (I_D=1.8 A, V_GS=15 V)
• Low total gate charge (Q_g): ~15 nC (V_DS=200 V, I_D=3 A, V_GS=10 V)
• Ultra‑fast switching (t_r ≈ 17 ns, t_f ≈ 22 ns)
• Insulated TO‑220F (TO‑220FI‑LS) package
• Ideal for SMPS, inverter/driver stages, and general high‑voltage switching

Specifications of 2SK2624 MOSFET

• Transistor Type: N‑Channel MOSFET
• Drain‑Source Voltage (V_DSS): 600 V
• Gate‑Source Voltage (V_GSS): ±30 V
• Continuous Drain Current (I_D): 3.5 A (DC)
• Pulsed Drain Current (I_DP): 12 A (PW ≤ 10 µs, D.C. ≤ 1%)
• On‑Resistance (R_DS(on)): 2.0 Ω type, 2.6 Ω max (I_D=1.8 A, V_GS=15 V)
• Input/Output/Reverse Capacitances: C_iss 550 pF; C_oss 165 pF; C_rss 85 pF
• Total Gate Charge (Q_g): 15 nC (typ.)
• Diode Forward Voltage (V_SD): 0.98–1.2 V (I_S=3 A)
• Power Dissipation (P_D): 2.0 W (Ta=25 °C), 25 W (T_c=25 °C)
• Channel Temperature (T_ch): 150 °C (max)
• Package: TO‑220F / TO‑220FI‑LS (insulated)

Applications of 2SK2624 MOSFET

• Switch‑mode power supplies (SMPS)
• High‑voltage driver and inverter stages
• General‑purpose high‑voltage, medium‑current switching

Related Links

• 2SK2624 Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x 2SK2624 N‑Channel Power MOSFET (TO‑220F)