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2N2222 Amplifier Transistor(TO-92)

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Stock: 1
Availability: InStock priceValidUntil: 2026-02-08
SKU: 821 | DAA284

Rs. 2.36 (inc GST)
Rs.2.00 + GST

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Description

2N2222 Amplifier Transistor

2N2222 is NPN BJT normally used in low power amplifiers and also for switching application.

2n2222 is used as a small signal transistor and used as a general purpose transistor and is very popular. This is in TO-92 package form.

Features of 2N2222 Transistor

NPN Silicon Planar Switching Transistors.
Switching and Linear application DC and VHF Amplifier applications.
Rating Symbol Value Unit
Collector–Emitter Voltage V_CEO: 40 Vdc
Collector–Base Voltage V_CBO: 75 Vdc
Emitter–Base Voltage V_EBO: 6.0 Vdc
Collector Current — Continuous I_C: 600 mAdc
Total Device Dissipation(P_D) @ T_A = 25°C : 625 mW
P_D Derate above 25°C : 5.0 mW/°C
Total Device Dissipation(P_D)@ T_C = 25°C : 1.5 Watts
P_D Derate above 25°C : 12 mW/°C
Operating and Storage Junction Temperature Range (T_J, T_stg) : –55 to +150 °C
Thermal Resistance, Junction to Ambient R_JA: 200 °C/W
Thermal Resistance, Junction to Case R_JC: 83.3 °C/W

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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2N2222 Amplifier Transistor(TO-92)

Qty :

2N2222 Amplifier Transistor

2n2222 is used as a small signal transistor and used as a general purpose transistor and is very popular. This is in TO-92 package form.

Features of 2N2222 Transistor

NPN Silicon Planar Switching Transistors.

Switching and Linear application DC and VHF Amplifier applications.

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO : 40 Vdc

Collector–Base Voltage VCBO : 75 Vdc

Emitter–Base Voltage VEBO : 6.0 Vdc

Collector Current — Continuous IC : 600 mAdc

Total Device Dissipation(PD) @ TA = 25°C : 625 mW

PD Derate above 25°C : 5.0 mW/°C

Total Device Dissipation(PD)@ TC = 25°C : 1.5 Watts

PD Derate above 25°C : 12 mW/°C

Operating and Storage Junction Temperature Range (TJ, Tstg) : –55 to +150 °C

Thermal Resistance, Junction to Ambient RJA : 200 °C/W

Thermal Resistance, Junction to Case RJC : 83.3 °C/W

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Collector–Emitter Voltage V_CEO: 40 Vdc

Collector–Base Voltage V_CBO: 75 Vdc

Emitter–Base Voltage V_EBO: 6.0 Vdc

Collector Current — Continuous I_C: 600 mAdc

Total Device Dissipation(P_D) @ T_A = 25°C : 625 mW

P_D Derate above 25°C : 5.0 mW/°C

Total Device Dissipation(P_D)@ T_C = 25°C : 1.5 Watts

P_D Derate above 25°C : 12 mW/°C

Operating and Storage Junction Temperature Range (T_J, T_stg) : –55 to +150 °C

Thermal Resistance, Junction to Ambient R_JA: 200 °C/W

Thermal Resistance, Junction to Case R_JC: 83.3 °C/W