IRF1404 N Channel Power MOSFET
- Stock: 20
- Brand: Infineon Technologies
- SKU: 716 | DAA160
-
Price :
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Infineon Technologies IRF1404PBF N-Channel Power MOSFET
IRF1404PBF N-channel power switching MOSFET with a 40 V rating, TO-220 package and 4 mΩ maximum on-resistance at VGS = 10 V and ID = 121 A.
Infineon Technologies IRF1404PBF is an N-channel power MOSFET that works as a power switching transistor in circuits. Its 40 V drain rating and low on-resistance support power designs that need to control current. The TO-220 package suits through-hole board assembly.
The low on-resistance power MOSFET design helps reduce conduction loss. Fast switching supports repeated switching in power circuits, while its dynamic dv/dt rating and avalanche-rated design offer useful switching characteristics for power stages.
Use this 40 V N-channel MOSFET in automotive applications, industrial power supplies, motor control and power management systems. Its switching function makes it a suitable discrete device for these designs.
Shop Infineon components at DNA, your retailer for MOSFET & IGBT. The IRF1404PBF power MOSFET suits power-switching designs. Review its verified ratings and package details when selecting a part. Check other MOSFET & IGBT that we have in stock
If you cannot find a part, contact DNA. We support Indian electronics buyers with import support and retail or bulk orders. You can also ask about Capacitor, IGBT, Humidity & Temperature Sensor, DC to DC Converter IC, Development Module and Digital IC. Contact Us
Features of Infineon Technologies IRF1404PBF N-Channel Power MOSFET
- N-channel power switching function
- Seventh-generation HEXFET process
- Low on-resistance design helps limit conduction loss
- Fast switching
- Dynamic dv/dt rating
- Fully avalanche rated
Specifications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET
- Drain-to-source breakdown voltage: 40 V minimum
- Static drain-to-source on-resistance: 3.5 mΩ typical, 4 mΩ maximum at VGS = 10 V and ID = 121 A
- Continuous drain current: 202 A at TC = 25°C and 143 A at TC = 100°C with VGS = 10 V
- calculated ratings, with a 75 A package limitation
- Gate-to-source voltage: ±20 V
- Operating junction temperature: −55°C to +175°C
- Package: TO-220, three leads
- Maximum power dissipation: 333 W at TC = 25°C
Applications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET
- Automotive applications
- Industrial power supplies
- Motor control
- Power management systems
Related Links for Infineon Technologies IRF1404PBF N-Channel Power MOSFET
Package Includes
- 1 X Infineon Technologies IRF1404PBF N-Channel Power MOSFET
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