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IRF1404 N Channel Power MOSFET

Name: IRF1404 N Channel Power MOSFET
Brand: Infineon Technologies
SKU: DAA160
Price: 62.54 INR
Availability: InStock
Rating: 5 (1 reviews)

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Stock: 20
Availability: InStock priceValidUntil: 2026-12-07
Brand: Infineon Technologies
SKU: 716 | DAA160

Price :
Rs.75.99 Rs. 62.54 (inc GST)
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Description

Infineon Technologies IRF1404PBF N-Channel Power MOSFET

IRF1404PBF N-channel power switching MOSFET with a 40 V rating, TO-220 package and 4 mΩ maximum on-resistance at VGS = 10 V and ID = 121 A.

Infineon Technologies IRF1404PBF is an N-channel power MOSFET that works as a power switching transistor in circuits. Its 40 V drain rating and low on-resistance support power designs that need to control current. The TO-220 package suits through-hole board assembly.

The low on-resistance power MOSFET design helps reduce conduction loss. Fast switching supports repeated switching in power circuits, while its dynamic dv/dt rating and avalanche-rated design offer useful switching characteristics for power stages.

Use this 40 V N-channel MOSFET in automotive applications, industrial power supplies, motor control and power management systems. Its switching function makes it a suitable discrete device for these designs.

Shop Infineon components at DNA, your retailer for MOSFET & IGBT. The IRF1404PBF power MOSFET suits power-switching designs. Review its verified ratings and package details when selecting a part. Check other MOSFET & IGBT that we have in stock

If you cannot find a part, contact DNA. We support Indian electronics buyers with import support and retail or bulk orders. You can also ask about Capacitor, IGBT, Humidity & Temperature Sensor, DC to DC Converter IC, Development Module and Digital IC. Contact Us

Features of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

N-channel power switching function
Seventh-generation HEXFET process
Low on-resistance design helps limit conduction loss
Fast switching
Dynamic dv/dt rating
Fully avalanche rated

Specifications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

Drain-to-source breakdown voltage: 40 V minimum
Static drain-to-source on-resistance: 3.5 mΩ typical, 4 mΩ maximum at VGS = 10 V and ID = 121 A
Continuous drain current: 202 A at TC = 25°C and 143 A at TC = 100°C with VGS = 10 V
calculated ratings, with a 75 A package limitation
Gate-to-source voltage: ±20 V
Operating junction temperature: −55°C to +175°C
Package: TO-220, three leads
Maximum power dissipation: 333 W at TC = 25°C

Applications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

Automotive applications
Industrial power supplies
Motor control
Power management systems

Package Includes

1 X Infineon Technologies IRF1404PBF N-Channel Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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