IRF1404 N-Channel Power MOSFET
- Stock: 3 InStock
- SKU: 0716 | DAA160
76.70 (inc GST)
Rs.65.00 + GST
GST Invoice on all Purchase. So you will be eligible to take input tax credit.
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.
|Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.|
IRF1404 N Channel Power MOSFET
IRF1404 is a 40 Volts Single N-Channel Power MOSFET in a TO-220 package
IRF1404 Power MOSFET is a seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
The IRF1404 N-Channel Power MOSFET comes on TO-220 package. The The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.
Features of IRF1404 Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Automotive Qualified (Q101)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 202 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 143 A
IDM Pulsed Drain Current 808 A
PD @TC = 25°C Power Dissipation 333 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V