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  • IRF1404 N-Channel Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

IRF1404 N-Channel Power MOSFET

  • Stock: 190
  • SKU: 0716 | DAA160
  • Rs. 76.70 (inc GST)
    Rs.65.00 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

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IRF1404 N Channel Power MOSFET

IRF1404 is a 40 Volts Single N-Channel Power MOSFET in a TO-220 package

IRF1404 Power MOSFET is a seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.

The IRF1404 N-Channel Power MOSFET comes on TO-220 package. The The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF1404 Power MOSFET

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Automotive Qualified (Q101)

  • ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 202 A

  • ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 143 A

  • IDM Pulsed Drain Current 808 A

  • PD @TC = 25°C Power Dissipation 333 W

  • Linear Derating Factor 2.2 W/°C

  • VGS Gate-to-Source Voltage ± 20 V

  • EAS Single Pulse Avalanche Energy 620 mJ

Benefits of IRF1404 Power MOSFET

  • Increased ruggedness
  • Multi-vendor compatibility
  • Industry standard qualification level
  • Standard pinout allows for drop in replacement
  • High current carrying capability

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