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IRF1404 Power MOSFET
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IRF1404 Power MOSFET
Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Features of IRF1404 Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Automotive Qualified (Q101)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 202 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 143 A
IDM Pulsed Drain Current 808 A
PD @TC = 25°C Power Dissipation 333 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 620 mJ
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