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IRF1404 N Channel Power MOSFET

  • Stock: 20

    Availability: InStock priceValidUntil: 2026-11-09

  • Brand: Infineon Technologies
  • SKU: 716 | DAA160

Availability: InStock priceValidUntil: 2026-11-09

  • Price :

    Rs.75.99 Rs. 62.54 (inc GST)

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

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Infineon Technologies IRF1404PBF N-Channel Power MOSFET

IRF1404PBF N-channel power switching MOSFET with a 40 V rating, TO-220 package and 4 mΩ maximum on-resistance at VGS = 10 V and ID = 121 A.

Infineon Technologies IRF1404PBF is an N-channel power MOSFET that works as a power switching transistor in circuits. Its 40 V drain rating and low on-resistance support power designs that need to control current. The TO-220 package suits through-hole board assembly.

The low on-resistance power MOSFET design helps reduce conduction loss. Fast switching supports repeated switching in power circuits, while its dynamic dv/dt rating and avalanche-rated design offer useful switching characteristics for power stages.

Use this 40 V N-channel MOSFET in automotive applications, industrial power supplies, motor control and power management systems. Its switching function makes it a suitable discrete device for these designs.

Shop Infineon components at DNA, your retailer for MOSFET & IGBT. The IRF1404PBF power MOSFET suits power-switching designs. Review its verified ratings and package details when selecting a part. Check other MOSFET & IGBT that we have in stock

If you cannot find a part, contact DNA. We support Indian electronics buyers with import support and retail or bulk orders. You can also ask about Capacitor, IGBT, Humidity & Temperature Sensor, DC to DC Converter IC, Development Module and Digital IC. Contact Us

Features of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

  • N-channel power switching function
  • Seventh-generation HEXFET process
  • Low on-resistance design helps limit conduction loss
  • Fast switching
  • Dynamic dv/dt rating
  • Fully avalanche rated

Specifications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

  • Drain-to-source breakdown voltage: 40 V minimum
  • Static drain-to-source on-resistance: 3.5 mΩ typical, 4 mΩ maximum at VGS = 10 V and ID = 121 A
  • Continuous drain current: 202 A at TC = 25°C and 143 A at TC = 100°C with VGS = 10 V
  • calculated ratings, with a 75 A package limitation
  • Gate-to-source voltage: ±20 V
  • Operating junction temperature: −55°C to +175°C
  • Package: TO-220, three leads
  • Maximum power dissipation: 333 W at TC = 25°C

Applications of Infineon Technologies IRF1404PBF N-Channel Power MOSFET

  • Automotive applications
  • Industrial power supplies
  • Motor control
  • Power management systems

Related Links for Infineon Technologies IRF1404PBF N-Channel Power MOSFET

Package Includes

  • 1 X Infineon Technologies IRF1404PBF N-Channel Power MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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