IRFP260N N-Channel Power MOSFET
- Stock: 1 InStock
- SKU: 0717 | DAA170
154.82 (inc GST)
Rs.131.20 + GST
GST Invoice on all Purchase. So you will be eligible to take input tax credit.
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.
|Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.|
IRFP260N N Channel Power MOSFET
IRFP260N is a 200 Voly Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP260N Power MOSFET is a Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRFP260N N Channel Power MOSFET comes in TO-247 Package. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.
Features of IRFP260N Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 200 A
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 560 mJ
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 10 V/ns
|Country of Origin||China|
|Imported By||ElectroSource Private Limited|