• IRFP260N N-Channel Power MOSFET

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IRFP260N N-Channel Power MOSFET

  • Stock: 1
  • SKU: 0717 | DAA170
  • Rs. 154.82 (inc GST)
    Rs.131.20 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRFP260N N Channel Power MOSFET

IRFP260N is a 200 Voly Single N-Channel HEXFET Power MOSFET in a TO-247AC package

IRFP260N Power MOSFET is a Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRFP260N N Channel Power MOSFET comes in TO-247 Package. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRFP260N Power MOSFET

  • Advanced Process Technology

  • Dynamic dv/dt Rating

  • 175°C Operating Temperature

  • Fast Switching

  • Fully Avalanche Rated

  • Ease of Paralleling

  • Simple Drive Requirements

  • ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 A

  • ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A

  • IDM Pulsed Drain Current 200 A

  • PD @TC = 25°C Power Dissipation 300 W

  • Linear Derating Factor 2.0 W/°C

  • VGS Gate-to-Source Voltage ±20 V

  • EAS Single Pulse Avalanche Energy 560 mJ

  • IAR Avalanche Current 50 A

  • EAR Repetitive Avalanche Energy 30 mJ

  • dv/dt Peak Diode Recovery dv/dt 10 V/ns


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Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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