IRFP260N N-Channel Power MOSFET

International Rectifier IRFP260N N-Channel Power MOSFET

IRFP260N N-Channel MOSFET offering low on-resistance, fast switching speed, and 200V voltage rating.

The International Rectifier IRFP260N N-Channel Power MOSFET is designed for high-efficiency applications. It features a 200V voltage rating, ensuring reliable performance in demanding environments. This device utilizes advanced processing techniques to achieve low on-resistance, making it suitable for various commercial and industrial applications. The TO-247 package allows for enhanced power levels, providing a robust solution compared to traditional TO-220 devices.

With a continuous drain current of 50A at 25°C and a power dissipation of 300W, the IRFP260N N-Channel Power MOSFET is engineered for reliability. It supports fast switching and is fully avalanche rated, ensuring operational safety. This MOSFET is ideal for applications requiring high performance and efficiency.

Explore the capabilities of the International Rectifier IRFP260N N-Channel Power MOSFET for your electronic projects. Its ease of paralleling and simple drive requirements make it a go-to component for designers seeking efficiency and reliability in power management.

Discover the reliability of the MOSFET & IGBT category at DNA. Explore the International Rectifier offerings and enhance your projects with high-performance components. Check other MOSFET & IGBT that we have in stock.

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Features of International Rectifier IRFP260N N-Channel Power MOSFET

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements

Specification of International Rectifier IRFP260N N-Channel Power MOSFET

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 A
• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
• IDM Pulsed Drain Current 200 A
• PD @ TC = 25°C Power Dissipation 300 W
• Linear Derating Factor 2.0 W/°C
• VGS Gate-to-Source Voltage ±20 V
• EAS Single Pulse Avalanche Energy 560 mJ
• IAR Avalanche Current 50 A
• EAR Repetitive Avalanche Energy 30 mJ
• dv/dt Peak Diode Recovery dv/dt 10 V/ns

Applications of International Rectifier IRFP260N N-Channel Power MOSFET

• Power management circuits
• Switching power supplies
• Motor control applications
• DC-DC converters
• Industrial automation systems

Related Links for International Rectifier IRFP260N N-Channel Power MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X International Rectifier IRFP260N N-Channel Power MOSFET