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0201NY Enhancement-Mode N-channel SOT-23 MOSFET

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Stock: 50

SKU: 7598 | DAG171

Rs. 24.78 (inc GST)
Rs.21.00 + GST

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Delivery: 2–8 days across India. No MOQ required.

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Description

0201NY Enhancement-Mode N-channel SOT-23 MOSFET

0201NY Enhancement-Mode N-channel SOT-23 MOSFET

The 0201NY MOSFET is an enhancement-mode N-channel MOSFET with a compact SOT-23 package, optimized for surface-mount applications. This MOSFET is widely used in portable and battery-powered devices due to its low gate threshold voltage and ability to operate efficiently in low-power conditions. Its low on-resistance (RDS(on)) helps minimize power loss, improving the overall efficiency of the circuit. The N0201NY MOSFET is a small-signal N-channel MOSFET designed for use in various switching and amplification applications, particularly where compact, low-power solutions are required.

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Low On-Resistance: Provides low RDS(on), reducing power loss and improving efficiency.
Fast Switching Speed: Enables rapid on/off transitions, making it suitable for high-speed switching applications.
Low Gate Threshold Voltage: Operates effectively at low voltages, ideal for battery-operated devices.
Compact Package: Small SOT-23 package for space-saving in dense PCB layouts.
High Reliability: Robust design ensures reliable operation over a wide range of conditions.

Specifications of 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Drain-Source Voltage (VDS): 20V
Gate-Source Voltage (VGS): ±12V
Drain Current (ID): 0.5A (continuous)
On-Resistance (RDS(on)): Typically around 0.7Ω (at VGS = 4.5V)
Power Dissipation (Ptot): 200mW
Gate Threshold Voltage (VGS(th)): 0.4V to 1.2V
Package: SOT-23

Package Includes

1 x 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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Product Images are shown for illustrative purposes only and may differ from actual product.

0201NY Enhancement-Mode N-channel SOT-23 MOSFET

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0201NY Enhancement-Mode N-channel SOT-23 MOSFET

DNA solutions, Nashik has various types of MOSFET's. Check out our complete collection of MOSFET's.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Specifications of 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Drain-Source Voltage (VDS): 20VGate-Source Voltage (VGS): ±12VDrain Current (ID): 0.5A (continuous)On-Resistance (RDS(on)): Typically around 0.7Ω (at VGS = 4.5V)Power Dissipation (Ptot): 200mWGate Threshold Voltage (VGS(th)): 0.4V to 1.2VPackage: SOT-23

Package Includes

1 x 0201NY Enhancement-Mode N-channel SOT-23 MOSFET

Write a review

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Drain-Source Voltage (VDS): 20V
Gate-Source Voltage (VGS): ±12V
Drain Current (ID): 0.5A (continuous)
On-Resistance (RDS(on)): Typically around 0.7Ω (at VGS = 4.5V)
Power Dissipation (Ptot): 200mW
Gate Threshold Voltage (VGS(th)): 0.4V to 1.2V
Package: SOT-23